Senior​/Process Quality Engineer

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Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

At Micron-Boise, , we are undergoing a historic $15 billion investment in semiconductor manufacturing; construction began in early 2023, with DRAM production slated for the second half of the decade. As a leader in the semiconductor industry, we build solutions that inspire and transform technology. With plans to invest more than $150 billion globally over the next decade in groundbreaking manufacturing, we are looking for passionate people to join our Boise expansion team and contribute to the growth and innovation of the semiconductor industry.

The Process Quality Engineering (PQE) team operates at the intersection of Technology Development (TD) and High-Volume Manufacturing (HVM – ID1) in Boise,  leads HVM FOUP Environment Control (FEC) programs, partnering with multiple engineering teams and Process Integration to understand processes, tools, systems, and challenges. The team prioritizes, defines, and drives studies on the impact of Airborne Molecular Contamination (AMC) within FOUP environments on wafer yield, and implements effective AMC countermeasures.

As a Process Quality Engineer, you will be recognized as a domain expert in FOUP Environment Control (FEC) for yield improvement. You will collaborate with collaborators across our Boise fabs and Micron’s global fab network to drive enhancements in process quality and wafer yield.

• Lead the development of the FOUP Environment Control (FEC) program for ID1 HVM greenfield fab startup, ensuring full system readiness.
• Partner with engineering teams to define FEC system enablement scope, align partners, secure resources, lead multi-functional meetings, and drive successful system activation.
• Collaborate with Micron’s global HVM network to capture best-known methods (BKMs) and lessons learned for FEC systems, including yield impact studies from current and previous DRAM nodes. Drive development and execution of FEC system Copy Exact/Copy Smart strategies as appropriate.
• Supervise production lines for yield issues potentially caused by wafer or process-related contamination and collaborate with Process Integration and Process & Equipment Engineering teams to design and implement experiments for resolution.
• Partner with vendors to evaluate new hardware and FOUP solutions, while aligning with internal team members to define and drive the roadmap for Fab4 HVM FOUP strategy.
• Represent the Fab4 PQE team in global alignment meetings with Micron’s fab network and central teams to ensure consistency and best-practice adoption.
• Assess risks and establish tool-sharing protocols between Fab4 TD and Fab4 HVM (ID1) through collaboration with key partners.
• Own the New Materials Integration (NMI) business process for TD materials, collaborating closely with fab partners including Process Development, Process Integration, Equipment, and Area Manufacturing Engineering teams.

• Bachelor’s or Master’s degree in Materials Science & Engineering, Chemical Engineering, Chemistry, or a closely related subject area.
• 3–8 years of hands-on experience in semiconductor manufacturing as a Process Module Development Engineer or Process Integration Engineer.
• In-depth expertise in DRAM or Logic process areas (such as Dry Etch, Thin Film Deposition, Photolithography, Wet Clean, CMP, and Metrology), with broad familiarity with the equipment used in these domains.
• Strong grasp of wafer and process-related contamination mechanisms across various process areas, and their effects on yield and product quality.
• Advanced skills in Statistical Process Control (SPC), including real-time fab data analysis and reporting, with proficiency in JMP for data visualization and analytics, plus deep knowledge of analytical instrumentation and its performance characteristics.