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DRAM Device Engineer – Advanced Memory & Cell Tech

Job in Boise, Ada County, Idaho, 83701, USA
Listing for: 1000 Micron Technology, Inc.
Full Time position
Listed on 2026-10-06
Job specializations:
  • Engineering
    Electronics Engineer, Hardware Engineer, Electrical Engineering, Systems Engineer
Salary/Wage Range or Industry Benchmark: 125000 - 180000 USD Yearly USD 125000.00 180000.00 YEAR
Job Description & How to Apply Below

Micron Technology, Inc. in Boise, Idaho, is seeking a Device Engineer to define and validate future DRAM device and cell technologies.

You will characterize memory arrays, analyze electrical behavior and failures, and influence process decisions that impact yield, quality and performance. This role requires an MS with 5+ years or a PhD, deep semiconductor device physics knowledge, and experience with DRAM, NAND, NOR or SRAM.

This role, DRAM Device Engineer – Advanced Memory & Cell Tech at 1000 Micron Technology, Inc., could be your next move.

We appreciate your interest in this position.

Join 1000 Micron Technology, Inc. and contribute to our ongoing work.

Take a moment to read everything above and see whether this role is right for you.

This posting is for the DRAM Device Engineer – Advanced Memory & Cell Tech role at 1000 Micron Technology, Inc., based in Boise, , United States.

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