SiGe HBT Device Expert

We can't predict what the future holds, but we know Texas Instruments will have a part in shaping it.

The Advanced Technology Development team at TI is looking for a Process Development Engineer with a long-term goal to be responsible for the development, characterization and optimization of BiCMOS SiGeC devices to meet the requirements for volume production. The ideal candidate will have a solid foundation in the theory of semiconductor CMOS or BJT process and device physics and would be comfortable driving the characterization and optimization of the device and process to insure robustness, reliability, and manufacturability meeting all electrical device performance targets.

Responsibilities include:

• Develop new processes and components to enable next generation BICMOS Si Ge Ctechnologies .
• Drive the TCAD simulation (process and device simulation, HF simulations),design of experiments,RF and DC characterization,and data analysis of key components.
• Work with multiple process, integration, reliability, packaging, circuit design and test engineers to achieve these goals.
• Work closely with the product groups to identify and optimize the BICMOS component performance to meet critical final device parameters to enable game changing products in the market.
• Work across different development groups; process flow, device design, modelling, simulation, reliability, etc.

The person performing this role must be capable to plan effectively, drive schedules, meet critical deadlines on multiple tasks in parallel, lead technical discussions in their area of expertise, and work effectively across organizational boundaries. They must be able to clearly communicate project status and actions. Additionally, they must be able to interface with multiple organizations and work well on a diverse team to accomplish goals.