PhD Position Electrical Engineering: Cryo-CMOS Circuit Design Temperature Sensors in Quantum
Listed on 2026-07-21
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Research/Development
Research Scientist, Electronics Engineer -
Engineering
Research Scientist, Electronics Engineer, Electrical Engineering
PhD Position Electrical Engineering:
Cryo-CMOS Circuit Design for Temperature Sensors in Quantum
Quantum computers and quantum sensors require electronic interfaces that can operate reliably at cryogenic temperatures. Conventional room-temperature electronics rely on extensive wiring, creating significant challenges for scalability, system integration, and performance. In this PhD project, you will contribute to the development of cryogenic electronic interfaces that support future quantum technologies.
You will join a leading research group at TU Delft that pioneers cryo-CMOS integrated circuits: CMOS circuits operating at temperatures as low as 4 K. These technologies enable highly integrated electronic systems for quantum computing and sensing applications, offering unique opportunities for innovation in analog and mixed-signal circuit design.
Your research will focus on the development of integrated cryogenic temperature sensors. Accurate temperature monitoring is essential for thermal management in complex quantum systems, where temperature variations can affect performance and reliability. Existing cryogenic sensors are often bulky, costly, and difficult to integrate. While smart temperature sensors in CMOS technology have been developed for decades at room temperature, those standard techniques cannot be readily applied at cryogenic temperatures, requiring innovations in sensing elements, readout circuitry, and power efficiency.
You will investigate new sensing principles and develop energy‑efficient sensor architectures specifically designed for operation at cryogenic temperatures.
Throughout your PhD, you will design, simulate, fabricate, and characterize multiple cryo-CMOS prototypes using advanced CMOS technologies. You will perform measurements in TU Delft’s dedicated cryogenic characterization facilities and gain experience with the complete integrated circuit design cycle, from concept development to experimental validation.
You will work closely with researchers, PhD candidates, and industrial partners active in cryogenic electronics and quantum technologies. Your results will contribute to international research projects and lead to presentations at leading conferences and publications in high-impact journals.
Job Requirements- You hold an MSc degree in Electrical Engineering (must-have).
- You have a strong interest and demonstrated interest in analog integrated circuit design.
- Hands‑on experience in circuit design, gained through academic research, industry projects, or internships, is considered an advantage.
- You have demonstrated strong analytical, creative, and problem‑solving abilities.
- Excellent written and verbal communication skills in English.
- Eagerness to work in an international collaborative environment.
Doctoral candidates will be offered a 4‑year period of employment in principle, in the form of two employment contracts: an initial 1.5‑year contract with an official go/no‑go progress assessment within 15 months, followed by an additional contract for the remaining 2.5 years, subject to performance requirements being met.
Salary and BenefitsSalary and benefits are in accordance with the Collective Labour Agreement for Dutch Universities, ranging from €3 059 to €3 881 gross per month, from the first year to the fourth year based on a full‑time contract (38 hours), plus 8 % holiday allowance and an end‑of‑year bonus of 8.3 %.
LocationDelft, Netherlands. Relocation assistance is available.
Final date to receive applicationsApplications are accepted until 6 Sep 2026.
ContactFor more information about this vacancy or the selection procedure, please contact Dr. Fabio Sebastiano via f.sebastiano.
Applicants are requested to submit CV, motivation letter, academic transcripts, and any additional documents requested during the application process.
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