Assistant​/Associate Professor In -Frequency InP Electronics

Position: Assistant/Associate Professor In High-Frequency InP Electronics
Job description  Applications like wireless communications and (radar) sensing are moving to increasingly high operating frequencies. Since chips are at their core, the semiconductor technologies need to scale to Terahertz frequencies. Here, the traditional silicon technologies start to break down. Indium phosphide (InP) electronics is not a new technology and is used in high‑end applications. However, new developments in materials science, fabrication technology, and heterogeneous integration, coupled to a boost in anticipated future demand, creates a unique opportunity to build a globally visible research program at the intersection of advanced III‑V semiconductor devices, heterogeneous integration, and next‑generation electronic systems.

Few locations worldwide offer such a combination of world‑class academic expertise, advanced cleanroom infrastructure, semiconductor manufacturing capabilities, and direct access to leading industrial partners.
Information  As an Assistant/Associate Professor, you will:
Develop an independent research line in innovative electronic device technologies that can push the frontiers of advanced electronics for high‑performance circuits, with potential applications in data centers, AI acceleration, 6G, radar, and sensor technologies.
Explore areas such as high‑speed III‑V component design, semiconductor epitaxial engineering, and fabrication of active components (e.g., diodes, HEMTs, HBTs), thereby leveraging our existing research infrastructure, like our cleanroom infrastructure and process knowledge.
Contribute to TU/e’s educational mission by teaching BSc and MSc courses, supervise PhD students and postdocs, and potentially contribute to life‑long learning activities.
Actively pursue research funding through national and European programs (e.g., Dutch subsidy, Horizon Europe, European Research Council, Chips Joint Undertaking) and industry collaborations.
In this role, you will contribute to the ambition of the Beethoven program to educate top talent and strengthen research across the fields of Science, Technology, Engineering, and Mathematics (STEM).
Requirements  The ideal candidate:
Holds a PhD in Electrical Engineering, Applied Physics, or a closely related field.
Has expertise in one or more of the following:
High‑speed III‑V component design at the process level, semiconductor epitaxial engineering and/or fabrication of active components such as diodes and transistors (HEMT, HBT).
Demonstrates strong research potential and ability to operate in a multidisciplinary environment.
Shows affinity with teaching and will commit to obtaining the University Teaching Qualification.
Has motivation to secure research funding and build collaborations with industry and academia.
Possesses excellent communication and organizational skills and the ability to motivate researchers.
Conditions of employment  A meaningful job in a dynamic and ambitious university, in an interdisciplinary setting and within an international network. You will work on a beautiful, green campus within walking distance of the central train station.
In addition, we offer you:
Salary in accordance with the Collective Labour Agreement for Dutch Universities, scale 11 - 14, min. € 4,925 max. € 8,992 gross per month (on a full-time basis).
In addition to your base salary, you will receive an 8% holiday allowance and an 8.3% year-end bonus, both calculated based on your annual gross base salary.
Generous leave options: a standard 29 days (based on a 38 hour working week) per year that you can increase to 41 days by working two hours more per week (flexible working hours). This is prorated if you work part-time.
As a TU/e employee, you participate in the ABP pension scheme, providing retirement pension and…