GaN RF Power Amplifier Engineer
Listed on 2026-10-06
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Engineering
Electronics Engineer, Systems Engineer, Electrical Engineering
Global Foundries inc. seeks a PhD-level RF GaN Power Amplifier Engineer based in Essex Junction to advance wireless and defense PA designs. You will design and simulate RF GaN PA circuits, perform EM modeling, and validate performance on test benches with cross-functional teams.
Ideal candidates hold a PhD in Electrical Engineering or related field and have hands-on RF/microwave PA design experience, GaN device physics, and proficiency in HFSS/ADS/Cadence. Up to 10% travel may be required.
We are looking to fill the GaN RF Power Amplifier Engineer position at Global Foundries inc. in Essex, MD, United States.
We invite applications for the GaN RF Power Amplifier Engineer position located in Essex, MD, United States.
The following opportunity is for a GaN RF Power Amplifier Engineer with Global Foundries inc.
Our group is growing, and we are hiring a GaN RF Power Amplifier Engineer in Essex, MD, United States.
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