RF GaN Technology Development Intern
Listed on 2026-10-06
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Engineering
Electronics Engineer
Global Foundries invites motivated students to join the Technology Development team for RF GaN in Vermont. As an intern you’ll work with process, integration, and device engineers to define and test GaN HEMT flows, and to analyze electrical performance, reliability and yield for RF applications.
We seek candidates pursuing a Master’s or PhD in Electrical Engineering or related fields, with solid device physics knowledge and semiconductor processing skills.
We are currently recruiting a RF GaN Technology Development Intern for our team in Essex, VT, United States.
Our group is growing, and we are hiring a RF GaN Technology Development Intern in Essex, VT, United States.
This role is for the RF GaN Technology Development Intern role at Global Foundries inc.
We are seeking a motivated RF GaN Technology Development Intern to join Global Foundries inc. in Essex, VT, United States.
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