RF Device Modeling Intern — SiGe HBT
Listed on 2026-10-11
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Engineering
Electronics Engineer
Global Foundries is offering an internship in device modelling to collaborate with an RF device modelling team. You will develop compact models (HiCUM L2 V3.0) for SiGe HBT devices, extract parameters, and validate against measurements.
Mentorship, growth opportunities, and network access with executives are provided. Ideal candidates are 2nd-year graduate students pursuing a Master’s or PhD in Electrical Engineering or Microelectronics, with a strong GPA and English proficiency.
We are looking to fill the RF Device Modeling Intern — SiGe HBT position at Global Foundries inc. in Essex Junction, VT, United States.
We are currently recruiting a RF Device Modeling Intern — SiGe HBT for our team in Essex Junction, VT, United States.
This is a strong opening to take on the RF Device Modeling Intern — SiGe HBT role at Global Foundries inc.
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