RF Device Modelling Intern; SiGe HBT
Listed on 2026-10-11
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Engineering
Electronics Engineer
Global Foundries in Vermont is offering an internship in RF device modelling within our RF modelling team. You will contribute to developing compact models for SiGe HBT devices, applying device physics, and using the HiCUM L2 V3.0 standard to create models for RF applications.
The role emphasizes hands-on data analysis, collaboration with the team, presenting results, and gaining mentorship. Candidates must be graduate students in EE or microelectronics, with strong academic standing and English
The RF Device Modelling Intern (SiGe HBT) role at Global Foundries is now open for applications in Essex Junction, VT, United States.
This posting is for the RF Device Modelling Intern (SiGe HBT) role at Global Foundries, based in Essex Junction, VT, United States.
We are looking to fill the RF Device Modelling Intern (SiGe HBT) position at Global Foundries in Essex Junction, VT, United States.
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