RF Technology Development Epitaxy and Integration Engineer – Principal Engineer

About Global Foundries Global Foundries  (GF) is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GF makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit  .New

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Summary of Role:

Global Foundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. Global Foundries' RF Technology Development Organization is looking for an epitaxy and integration engineer in developing semiconductor technologies to join our RF team in Essex Junction, VT.

Essential Responsibilities:

Develop, evaluate and qualify CVD Si / SiGe epitaxial process.

Define epitaxial growth conditions and controls methodology to meet both the technology performance requirements and the manufacturability criteria

Responsible for development, optimization, and qualification of FEOL semiconductor devices and processes to meet performance, cost and yield requirements

Drive integration optimization using DOE methodologies, statistical analysis, and yield learning techniques.

Partner with unit process module engineers, failure analysis and characterization team to improve device performance and yield

Own and drive technical process problem solving.

Interact with internal & external customers and respond to technical queries.

Establish new technology design rules, test structures and test methodologies.

Innovate new methods of continuous process/device improvement.

Other Responsibilities:

Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications:

Education – Graduating with Master’s or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline from an accredited degree program.

Familiarity with epitaxial growth techniques and hands-on experience with epitaxial growth – silicon or III-VMust have at least an overall 3.0 GPA and proven good academic standing.

Language Fluency - English (Written & Verbal)

Preferred Qualifications:

Minimum 2 Years of Experience in Silicon or SiGe BiCMOS FEOL or BEOL or III-V processing and/or semiconductor process development

Minimum 2 years of relevant epitaxial growth engineering experience.

Knowledge of semiconductor device physics and/or RF fundamentals (e.g. S-parameters)
Prior related internship or co-op experience.

Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.

Project management skills, i.e. the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.

Strong written and verbal communication skills

Strong planning & organizational skills undefined

Expected Salary Range $85,000.00 - $The exact Salary will be determined based on qualifications, experience and location.

If you need a reasonable accommodation for any part of the employment process, please contact us by email at  and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for…