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Postdoctoral Research Associate

Job in Fort Worth, Tarrant County, Texas, 76101, USA
Listing for: Texas State University
Full Time position
Listed on 2026-11-01
Job specializations:
  • Research/Development
    Research Scientist, Electronics Engineer
  • Engineering
    Research Scientist, Electrical Engineering, Electronics Engineer
Salary/Wage Range or Industry Benchmark: 52000 - 68000 USD Yearly USD 52000.00 68000.00 YEAR
Job Description & How to Apply Below

Texas State University is a doctoral-granting institution with high research activity, dedicated to advancing innovation and expanding the frontiers of research. Our Ultrawide Bandgap Semiconductor (UWBG) lab focuses on developing next-generation UWBG materials and process technologies based on diamond, III-nitrides, and Ga₂O₃ for high-power, high-frequency, and extreme-environment electronics. Our research integrates advanced thin-film growth, laser-based processing, doping strategies, and interface engineering to enable energy-efficient, radiation-hardened, and thermally robust electronic systems, with applications spanning power electronics, space systems, and national defense technologies.

Position Overview

Under the Nathinal Science Foundation and Department of Defense grants, we are seeking a highly motivated and talented Postdoctoral Research Fellow to join our UWBG Semiconductor Lab. The successful candidate will work on cutting-edge research projects focused on ultrawide bandgap materials (e.g., diamond, III-nitrides, and Ga₂O₃), advancing next-generation electronic devices through innovations in thin film epitaxy, doping, interface engineering, and laser-based processing to achieve superior performance, thermal management, and energy efficiency in high-power and high-frequency applications.

Key Responsibilities
  • Conduct research on ultrawide bandgap (UWBG) semiconductor materials (e.g., diamond, III-nitrides, Ga₂O₃), focusing on heteroepitaxial growth, doping, defect engineering, and thermal management.
  • Investigate thermal transport, interface engineering, and heat dissipation strategies in high-power and high-frequency electronic devices through experimental and modeling approaches.
  • Develop and optimize thin-film growth and processing techniques (e.g., CVD, PLD, sputtering, laser annealing) for next-generation semiconductor devices.
  • Perform primarily experimental research, with a smaller component involving materials modeling and atomistic simulations to support and interpret experimental results.
  • Collaborate with a multidisciplinary team spanning materials science, electrical engineering, and device physics.
  • Publish research findings in high-impact journals and present at leading academic and industry conferences.
  • Assist the PI in research proposal development for federal funding agencies and mentor graduate and undergraduate students and support their research and professional development.

This position is subject to the availability of funds.

Position Requirements
10+ Years work experience
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