GaN Defect Modeling & Potentials Scientist
Listed on 2026-10-07
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Research/Development
Research Scientist, Data Scientist
The National Institute of Standards and Technology's Material Measurement Laboratory seeks an associate researcher to develop a multi-scale modeling infrastructure for predicting properties and performance of GaN-based semiconductor devices.
The position focuses on classical atomistic methods to study defects, interfaces, and how interatomic potentials influence outcomes, with an emphasis on sharing data through open-source codes and collaboration with NIST researchers.
We invite applications for the GaN Defect Modeling & Potentials Scientist position located in Gaithersburg, MD, United States.
The following position is for a GaN Defect Modeling & Potentials Scientist with National Institute of Standards and Technology.
Our group is growing, and we are hiring a GaN Defect Modeling & Potentials Scientist in Gaithersburg, MD, United States.
This position is for the GaN Defect Modeling & Potentials Scientist role at National Institute of Standards and Technology.
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