Postdoctoral Researcher in Novel SWIR and Room-Temperature MWIR CQD Photodetectors

King Abdullah University of Science and Technology:
Postdoc Positions:
Physical Science and Engineering Division (postdoc):
Material Science and Engineering (postdoc)
Location

King Abdullah University of Science and Technology (KAUST)

Postdoctoral Research Positions in Colloidal Quantum Dots for Infrared Photodetectors

Our lab has made significant advances in III‑V colloidal quantum dots (CQDs) and extended‑SWIR PbS materials for high-performance infrared photodetectors and imaging systems. We invite applications for two postdoctoral positions focused on next‑generation SWIR and room‑temperature MWIR photodetectors based on III‑V, Ag₂Te, and related CQDs.

The project aims to establish a materials‑to‑device platform using InAs‑, InSb‑, Ag₂Te‑, and extended‑SWIR PbS/PbSe‑based CQDs, with emphasis on surface reconstruction, ligand engineering, precursor chemistry, energetic band alignment, low‑trap‑density CQD solids, and novel infrared photodetector architectures.

The first position focuses on CQD synthesis and surface chemistry, including solution‑phase ligand exchange and thin‑film engineering. The second position focuses on novel infrared photodetector architectures incorporating metasurfaces and optical‑field manipulation for high‑performance SWIR and exploratory room‑temperature MWIR detection.

Candidates should hold a PhD in chemistry, materials science, electrical engineering, applied physics, or a related field, with expertise in colloidal nanocrystal synthesis or optoelectronic device physics. Experience in III‑V CQDs, infrared photodetectors, surface spectroscopy, thin‑film processing, or low‑noise optoelectronic measurements is highly desirable.

We seek a postdoctoral researcher to develop novel SWIR and exploratory room‑temperature MWIR photodetectors based on CQDs. The position focuses on device architecture design, charge‑transport‑layer engineering, dark‑current suppression, metasurface integration, optical‑field manipulation, and low‑noise detector characterization. The successful candidate will translate optimized CQD solids into high‑performance infrared photodetectors with enhanced light absorption, carrier extraction, and operational stability.

• Design novel infrared photodetector architectures integrating CQD thin films with metasurfaces, optical cavities, plasmonic resonators, and other light‑management structures.
• Develop high‑performance SWIR CQD photodetectors using III‑V CQDs and related materials.
• Explore room‑temperature MWIR detection using narrow‑bandgap CQDs and heterostructures.
• Design device architectures that suppress dark current and enhance photocarrier extraction.
• Study charge transport, recombination, noise, response speed, and operational stability.
• Develop photodiode and LED platforms for infrared detection.
• Establish quantitative structure–property–device relationships in collaboration with the surface‑chemistry postdoc.

• Fabricate CQD infrared photodetectors using solution‑processed thin films.
• Optimize device structures, transport layers, electrodes, and interfacial layers.
• Measure and analyze responsivity, EQE, detectivity, dark current, noise spectral density, linear dynamic range, response time, and stability.
• Investigate dark‑current mechanisms, trap‑assisted transport, carrier mobility, and recombination dynamics.
• Develop strategies for room‑temperature SWIR and MWIR operation.
• Collaborate with the CQD chemistry team to correlate ligand chemistry and surface passivation with device performance.
• Prepare high‑quality manuscripts and present results at conferences.

• Work independently while contributing to a collaborative research…