Postdoctoral Researcher in III–V CQD Surface Chemistry and Ligand Engineering

King Abdullah University of Science and Technology:
Postdoc Positions:
Physical Science and Engineering Division (postdoc):
Material Science and Engineering (postdoc) Location

King Abdullah University of Science and Technology (KAUST)

Postdoctoral Research Positions in Colloidal Quantum Dots for Infrared Photodetectors

The FuN Lab at KAUST has made significant advances in III-V colloidal quantum dots (CQDs) and extended-SWIR PbS materials for high-performance infrared photodetectors and imaging systems. We invite applications for two postdoctoral positions focused on next-generation SWIR and room-temperature MWIR photodetectors based on III-V, Ag2

Te, and related CQDs.

The project aims to establish a materials-to-device platform using InAs-, InSb-, Ag2

Te-, and extended-SWIR PbS/PbSe-based CQDs, with emphasis on surface reconstruction, ligand engineering, precursor chemistry, energetic band alignment, low-trap-density CQD solids, and novel infrared photodetector architectures.

The first position focuses on CQD synthesis and surface chemistry, including solution-phase ligand exchange and thin-film engineering. The second position focuses on novel infrared photodetector architectures incorporating metasurfaces and optical-field manipulation for high-performance SWIR and exploratory room-temperature MWIR detection.

Candidates should hold a PhD in chemistry, materials science, electrical engineering, applied physics, or a related field, with expertise in colloidal nanocrystal synthesis or optoelectronic device physics. Experience in III-V CQDs, infrared photodetectors, surface spectroscopy, thin-film processing, or low-noise optoelectronic measurements is highly desirable.

This position focuses on the chemical control of III-V CQD surfaces. The researcher will develop surface-reconstructed, low-trap-density CQDs and ligand-exchanged CQD inks for infrared photodetectors. The central goal is to understand and control how precursor reactivity, surface stoichiometry, ligand engineering, and electronic passivation determine charge transport, recombination, band alignment, and photodetector performance.

Key Objectives

• Establish surface reconstruction strategies for InAs, InSb, and SWIR/MWIR-active CQDs to suppress trap states and improve electronic quality.
• Build ligand libraries for electronic passivation, controlled doping, and improved interdot coupling.
• Develop solution-phase ligand exchange processes for stable III-V CQD/nanorod inks.
• Control precursor reactivity, nucleation, growth, alloying, and shell formation.
• Determine energetic alignment between CQD films and charge-transport layers.
• Correlate surface chemistry with optical, electronic, and photodetector properties.

Responsibilities

• Synthesize III-V CQDs using air-free colloidal methods.
• Design and optimize precursor chemistry for InAs-, InSb-, Ag2
  
  Te-, and PbSe/PbS-based nanocrystals.
• Perform surface reconstruction and ligand-exchange studies.
• Develop solution-processed CQD inks with controlled ligand density and colloidal stability.
• Characterize CQD surfaces using XPS, UPS, FTIR, NMR, TEM, XRD, absorption, PL, and time-resolved PL.
• Fabricate CQD thin films and evaluate morphology, conductivity, trap density, and stability.
• Study band alignment between CQDs and charge-transport layers.
• Work closely with the device-focused postdoc to connect surface chemistry with detector performance.
• Prepare manuscripts, contribute to grant reports, and present results at scientific meetings.

Successful candidates are expected to:

• Work independently while contributing to a collaborative research program.
• Maintain rigorous experimental records and reproducible protocols.
• Develop mechanistic understanding beyond…