Wet Process Development Engineer

Job-:
Engineering - Product Dev

Location:

Lehi, UT, United States Posted:
Shift/

Work Schedule:

1st ShiftECL/GTC

Required:

Yes Change the world. Love your job. SiGe strained channel and silicided contact integration at 28nm demands wet etch and clean chemistries that operate at nanometer precision: removing exactly the right material, at exactly the right selectivity, without disturbing adjacent films or device structures. At LFAB, these processes don’t yet exist in production form. You will build them. As a Wet Process Development Engineer in TI’s ATD organization in Lehi, you will own the development, integration, and qualification of wet etch and clean modules for the 28nm SiGe and silicidation device flows which which directly enabling LFAB’s technology ramp from development to high-volume manufacturing.

Your work spans the full arc from chemistry formulation through module integration, yield analysis, and production readiness. The wet process modules you develop will run on every wafer ponsibilities include:

Module Integration:
Develop and optimize wet process flows for SiGe epi-layer cleaning and selective removal without damage to underlying Si or gate oxide

Selective Etching:
Define chemistries for high-precision isotropic and anisotropic etching with focus on SiGe/Si/silicided film selectivity and undercut control at 28nm geometries

Yield & Defectivity:
Identify root causes of process-related defects using FMEA and 8D methodologies; implement Statistical Process Control (SPC) to support the 28nm yield ramp toward high-volume manufacturing

Cross-Functional Collaboration:

Partner with Epi, Lithography, Spacer Films, and CMP teams to ensure seamless integration of wet modules into the full 28nm SiGe and silicidation fabrication flow Metrology & Characterization:
Utilize SEM, TEM, ellipsometry, and AFM to characterize surface roughness and etch profiles at atomic resolution

This role requires the ability to manage multiple parallel work streams under schedule pressure, lead technical discussions with authority, communicate status and risks clearly, and drive alignment across organizational boundaries in a fast-paced technology development environment.

Qualifications

Minimum requirements:

Master’s or Ph.D. in Materials Science, Chemical Engineering, Electrical Engineering, Physics, or related field5+ years in R&D semiconductor wafer fabrication for advanced nodes (28nm or below)
Technical depth in:

SiGe device physics, surface preparation, and chemical reaction kinetics

Wet etch chemistries across a broad range of film types

Hands-on experience with single-wafer or batch wet process tools (LAM, TEL, SCREEN, or equivalent)
Design of Experiments (DOE) methodology

Leading cross-functional teams from concept to production-ready status

Preferred qualifications:

Experience developing new wet process modules from the ground up Strong inline-to-end-of-line signal correlation and process characterization skills

Ability to build and maintain stakeholder relationships across internal and external partners

Strong verbal and written communication skills

Demonstrated ability to ramp quickly on new systems and processes

About the organization TI does not make recruiting or hiring decisions based on citizenship, immigration status or national origin. However, if TI determines that information access or export control restrictions based upon applicable laws and regulations would prohibit you from working in this position without first obtaining an export license, TI expressly reserves the right not to seek such a license for you and either offer you a different position that does not require an export license or decline to move forward with your employment.

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