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R&D Power Semiconductor Chip Engineer f​/m​/d

Job in 5600, Lenzburg, Kanton Aargau, Switzerland
Listing for: 3M HEALTHCARE
Full Time position
Listed on 2026-07-12
Job specializations:
  • Engineering
    Electrical Engineering, Electronics Engineer, Research Scientist, Process Engineer
  • Research/Development
    Electronics Engineer, Research Scientist
Salary/Wage Range or Industry Benchmark: 110000 - 170000 CHF Yearly CHF 110000.00 170000.00 YEAR
Job Description & How to Apply Below
Position: R&D Power Semiconductor Chip Engineer 80 – 100% (f/m/d)

Overview

In our R&D BiMOS semiconductor chip groups at Hitachi Energy Semiconductors, we are developing advanced power semiconductor devices across multiple voltage classes. Our high‑quality products are manufactured at internal and external production sites and delivered to customers worldwide across a wide range of applications, including industrial, renewable energy, traction, and e‑mobility. We are looking for a motivated R&D Semiconductor Chip Specialist to contribute to the development of next‑generation power semiconductor technologies, focusing primarily on silicon power diodes and expanding to IGBTs and MOSFETs.

Responsibilities
  • Contribute to the development of next‑generation power semiconductor chips, with a focus on silicon power diodes and related device technologies.
  • Support the end‑to‑end technology and product development cycle, from concept and simulation through to validation and reliability assessment.
  • Apply and further develop TCAD simulation models to understand device behavior and optimize performance, yield, and cost.
  • Collaborate closely with process engineers, characterization and reliability teams to align design with manufacturability.
  • Take ownership of individual work packages or sub‑projects, contributing to overall project goals and timelines.
  • Drive continuous improvement through data‑driven analysis, modeling, and optimization approaches.
  • Actively contribute to knowledge sharing within the team and build a strong systems‑level understanding of semiconductor devices and processes.
Qualifications
  • Master’s or PhD in Physics, Electrical Engineering, or a related field with a focus on semiconductor device physics.
  • Proven experience in power semiconductor device development, ideally with exposure to silicon power diodes.
  • Strong hands‑on experience with TCAD simulation tools (e.g., Sentaurus, COMSOL).
  • Good understanding of semiconductor device physics, characteristics, and technology development processes.
  • Experience in cross‑functional collaboration with process, characterization, and reliability teams.
  • Initial experience owning technical tasks or supervising junior profiles is a plus.
  • Familiarity with process integration aspects or modeling approaches is considered an advantage.
  • Self‑driven, analytical, and eager to learn and grow in a high‑performance R&D environment.
  • Proficiency in English with strong communication and presentation skills.
EEO Statement

Qualified individuals with a disability may request a reasonable accommodation if you are unable or limited in your ability to use or access the Hitachi Energy career site as a result of your disability. You may request reasonable accommodations by completing a general inquiry form on our website and including your contact information and specific details about your required accommodation to support you during the job application process.

This is solely for job seekers with disabilities requiring accessibility assistance or an accommodation in the job application process. Messages left for other purposes will not receive a response.

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