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Principal Device Engineer

Job in Manchester, Greater Manchester, M9, England, UK
Listing for: Nexperia
Full Time position
Listed on 2026-08-12
Job specializations:
  • Engineering
    Systems Engineer, Test Engineer, Electronics Engineer, Hardware Engineer
Job Description & How to Apply Below
At Nexperia Manchester, we are expanding our Advanced Devices (TCAD) capability to accelerate innovation across our Power Trench MOSFET portfolio. As a Principal Device Engineer, you will play a critical role in shaping next‑generation device concepts, driving technology optimisation, and influencing early‑stage decisions that define our future products.

You will act as a senior technical contributor within BGMOS, applying first‑principles device physics and advanced TCAD simulation to guide development from concept through to industrialisation. This is a role for a deep technical thinker who enjoys solving complex problems, collaborating across functions, and turning simulation insights into real‑world semiconductor technologies.

What you will doAs a Principal Device Engineer, you will lead the TCAD‑driven development and optimisation of Power Trench MOSFET technologies. You will explore new device architectures, analyse performance trade‑offs, and translate simulation outcomes into process and layout requirements. You will support technology roadmaps, contribute to feasibility studies, and troubleshoot device‑level issues across development and production. You will collaborate closely with Process Integration, Product Development, Design, Manufacturing and Foundry partners, acting as a technical anchor for early‑stage innovation.

Key responsibilities

Develop and optimise Power Trench MOSFET architectures using advanced TCAD simulation

Perform electrostatic, thermal and reliability‑relevant simulations to guide device decisions

Design and refine cell structures, termination schemes, and next‑generation device concepts

Support technology roadmaps with quantitative trade‑off and feasibility analysis

Translate simulation insights into process, layout and structural requirements

Conduct day‑to‑day TCAD simulations, documentation, silicon learning support (splits, DOE, calibration), and troubleshooting of device‑level issues

Engage in regular technical exchanges with Process Integration, Product Development, Design, Manufacturing and Foundry partners

Contribute to intellectual property generation and early‑stage concept definition

What you will deliver

High‑quality TCAD simulation outputs and device concept evaluations

Optimised device architectures and termination schemes

Quantitative trade‑off analyses supporting technology roadmap decisions

Clear technical documentation and communication of simulation insights

Contributions to silicon learning cycles and device‑level troubleshooting

Technical inputs that influence product development and industrialisation IP disclosures and innovation proposals

Strong cross‑functional collaboration across BGMOS and manufacturing partners

What you will need Essential requirementsMSc or PhD in Electrical Engineering, Physics, or a related field

Several years’ experience in device engineering and TCAD‑based technology development

Strong understanding of semiconductor device physics

Deep expertise with TCAD tools (e.g. Synopsys Sentaurus)

Experience with Power MOSFET device concepts, ideally trench‑based

Ability to analyse performance, reliability and manufacturability trade‑offs Strong analytical and problem‑solving mindset

Clear, structured technical communication skills

Ability to travel occasionally as required

Beneficial

PhD focused on power semiconductor devices

Industrial or foundry experience in Power MOSFET technology

Experience with process integration or layout‑driven device optimisation

Knowledge of high‑field effects, ruggedness (UIS) and reliability mechanisms

Understanding of foundry developments and process transfers

Proactive, innovative mindset with the ability to challenge assumptions

Interview process

Stage 1:
Recruiter Review Stage 2:
Teams interview

Stage 3:
On site or teams final interview and assessment

Your benefits will include

Remuneration & Reward Excellent starting salary, Annual Incentive Plan of up to 20%, contributory pension scheme up to 9%, recognition rewards scheme, EV salary sacrifice scheme, income protection, and 12 salary life assurance policy.

Health & Wellbeing – 33 days annual leave, hybrid and flexible working, flexible benefits scheme, enhanced parental…
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