Principal Microelectronics Device Engineer — RF GaN/InP
Listed on 2026-10-20
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Engineering
Electronics Engineer, Systems Engineer, Electrical Engineering
Northrop Grumman Microelectronics Center (NGMC) in Redondo Beach, CA, seeks a Microelectronics Device Engineer to advance III-V technologies and mature them from research through production. You will lead device development, work with cross-functional teams, and tackle challenging RF/microwave problems.
The ideal candidate has strong semiconductor device physics expertise, leadership experience, and US citizenship with the ability to obtain a DoD secret clearance.
We would love to welcome a new Principal Microelectronics Device Engineer — RF GaN/InP to our organisation in Manhattan Beach, CA, United States.
We invite applications for the Principal Microelectronics Device Engineer — RF GaN/InP position located in Manhattan Beach, CA, United States.
The following position is for a Principal Microelectronics Device Engineer — RF GaN/InP with Northrop Grumman.
Our group is growing, and we are hiring a Principal Microelectronics Device Engineer — RF GaN/InP in Manhattan Beach, CA, United States.
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