GaN RF Power Amplifier Design Intern

MACOM (NASDAQ: MTSI) is a global leader in the design and manufacture of advanced semiconductor products across a diverse range of end markets, including Data Centers, Telecommunications, Industrial and Aerospace and Defense.  We develop innovative, cutting-edge technologies and products across the spectrum of radio frequency (RF), microwave, millimeter wave, photonics and high-speed analog technologies.  Our solutions support critical network infrastructure applications like artificial intelligence, high performance computing, satellite communications, radar, unmanned aerial vehicles, medical equipment, test and measurement and advanced wireless networks.

MACOM has more than 75 years of expertise in semiconductor process development, wafer fabrication, circuit design, advanced packaging, systems architecture and applications engineering. We are committed to our customers’ success.  We partner with customers to help solve their most challenging problems by providing semiconductor solutions that are at the forefront of the highest power, highest frequency and/or highest data rates.

Leading technologies, innovative products and driven employees. Come be a part of MACOM and help advance the next generation of connectivity infrastructure!
** GaN RF Power Amplifier Design Intern
**** Role Overview:
** As a member of the RF Power Product Design team, the RF Power Amplifier Design Intern will work alongside experienced engineers providing mentoring, guidance, and introductions to colleagues. The design intern will be working at the Morgan Hill Design Center alongside a highly knowledgeable team of RF engineers and will initially be tasked with RF power device design of MACOM’s high power GaN transistor products geared towards, Multi Market, Base Station and 5G markets.

As an intern you will learn the handling RF devices, biasing devices, capturing accurate RF data and EM simulation. A follow-on activity will task the intern to design an impedance matching network for an amplifier, using either MWO or ADS design software, in order to match the device to a 50 ohm environment. The intern will be expected to layout the impedance matching network in AutoCAD, have the device sample and amplifier fabricated and will be tasked to assemble, solder components and tune the circuit on the RF bench.

Performance data of the measured amplifier will then be compared to the design simulation.

This Internship with MACOM will help the Intern to gain valuable work experience in a key discipline, build professional relationships, and take ownership of a business-critical project.
** During the 12 weeks each Intern will:*
* • Be given an individual and well-defined project with set outcome goals
• Gain hands on experience
• Receive excellent training and ongoing supervision
• Be invited to attend an intern webinar series
• Attend networking/social events
• Attend and present at Poster Session about each Interns project successes and pitfalls
• Receive formal, written feedback
** Requirements:*
* • Working toward a Bachelor’s or Master’s degree in Electrical Engineering.
• Strong interest in RF/microwave and semiconductor devices; relevant coursework and/or lab work a must
• Willing to work hands-on in the lab to test RF devices and assemble and test RF amplifiers
• Attention to detail and strong documentation skills
** Prerequisite

Skills and Experience:

*
* • Understanding of Linear Circuit Theory
• Understanding of Transmission-line Theory
• Impedance Matching/Transform, Smith Chart
• Additional Desirable

Skills:

• RF design software including ADS, MWO
• 2.5D or 3D EM simulation
• RF passive/active circuit design
• Doherty Power Amplifier The Hourly Range for this position is $20 – $47 per hour. Actual salary offered to candidate will depend on several factors, including but not limited to, work location, relevant candidates’ experience, education, and specific knowledge, skills, and abilities.