Postdoctoral Appointee - Compound Semiconductor Microelectronics, Onsite

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We have an exciting opportunity for a postdoctoral appointee to join our compound semiconductor microelectronics research and development team. We work in a highly collaborative teaming environment to conduct III‑V compound semiconductor research and development using molecular‑beam epitaxy and microfabrication processes for a wide variety of optoelectronic and microelectronic devices for our national security mission. This position provides the opportunity to develop device designs, translate them into epitaxial structures, and evaluate device characteristics.

This work will span III‑V materials from phosphides to mixed arsenide‑antimonides, with application to devices from established GaAs‑based microelectronics to novel InP‑ and GaSb‑based optoelectronics. This position requires a combination of individual contribution, coordination of engineering support personnel, and collaboration with other Sandia technical staff.

• Participate in and lead creative research involving state‑of‑the‑art III‑V materials from phosphides to mixed arsenide‑antimonides, with application to devices from established GaAs‑based microelectronics to novel InP‑ and GaSb‑based optoelectronics advance compound semiconductor technologies and Sandia's capability to deliver them to federal programs.
• Perform material or device characterization, device simulation, device fabrication process development, epitaxial growth, and the interpretation of test data to enhance device performance.
• Report results through internal and external publications and presentations and interfacing with stakeholders and customers to understand and meet requirements and develop new business opportunities.
• Collaborate closely with experts across and outside Sandia to realize high‑quality III‑V microelectronics products for programs ranging from fundamental research to small‑scale device production.
• Work within a diverse team to iterate and optimize device designs based on test results and prototype performance.
• Create, seek, and develop new opportunities that utilize our world‑class III‑V Microelectronics capabilities.

Due to the nature of the work, the selected applicant must be able to work onsite.

• Ph.D. in Electrical Engineering, Applied Physics, Materials Science or other relevant field conferred within five (5) years prior to employment
• Background in the development of microelectronic or optoelectronic devices
• Ability to obtain and maintain a DOE L‑level security clearance

• Experience with:
  • III‑V materials
  • molecular‑beam epitaxy
  • simulation of microelectronic or optoelectronic heterostructures
  • fabrication or test of microelectronic or optoelectronic devices
• Evidence of dedication to laboratory safety
• Record of semiconductor device research innovation, as evidenced by peer‑reviewed journal publications, conference presentations, or patents
• Strong teamwork and interpersonal skills

The III‑V Microelectronics Department is responsible for the research and technology…