Senior​/Principal Physics- Ion Beam Laboratory Nanofabrication, Onsite

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The Radiation‑Solid Interactions Department at Sandia National Laboratories, which operates the Ion Beam Laboratory (IBL), is seeking a senior physicist with a strong interest and expertise in the modeling of radiation induced defects in semiconductor materials and devices. The successful candidate will explore development and use of computational simulations, including a Sandia developed 1D Experimental Physics Code (XPD), clustering of electrically active defects in state‑of‑the‑art semiconductor devices and simulation of ion beam implantation and irradiation.

Current projects include:

• 1D Experimental Physics Code (XPD):
  Investigating the effects of radiation induced electrically active defects on semiconductor materials and devices using an atomistic based drift‑diffusion model that is defect aware.
• Clustering of Defects:
  Exploring the effects of radiation induced defects on state‑of‑the‑art semiconductor devices including FINFET and GAAFET geometries.
• Ion Beam Implantation and Irradiation:
  Explore the effects of ion irradiation and implantation using binary collision approximate codes including SRIM and Marlowe.

While this position is primarily modeling, and simulation based a candidate would be expected to interact with multiple experimental staff and develop a solid understanding of ion beam implantation and irradiation capabilities at the IBL to further understand the radiation induced defects and characterization. Additionally, you will collaborate with a multidisciplinary team, engaging with both internal and external at Sandia and Los Alamos National Laboratories.

On any given day, you may be called on to:

• Develop and Utilize Computational simulations of radiation effects in semiconductor devices, including 1D Experimental Physics Codes (XPD) and commercial TCAD software:
  We routinely use the XPD code to simulate the effects of radiation on a wide variety of materials and devices including Si, GaAs and GaN including diodes, bipolar junction transistors (BJTs), heterojunction bipolar transistors (HBTs), high voltage diodes (HV) and high electron mobility transistors (HEMTs). XPD is an in‑house developed defect aware drift‑diffusion code that outputs a time dependent carrier flow based on capture and emission of carriers by defects and evolution of defects by diffusion and reactions, i.e. annealing.
• Develop and Utilize Binary Collision Codes (BCC) for Ion Implantation and Irradiation Studies:
  We use BCC codes SRIM and Marlowe, to explore the effects of ion beam implantation and irradiation. Additionally, we develop novel implementation that allow us to explore the effects of defect clustering on state‑of‑the‑art CMOS devices.
• Collaborate in a Multidisciplinary Team:
  Contribute to significant advancements in the quantum realm, resulting in multiple high‑impact publications, including articles in prestigious journals such as Science and Nature, as well as several R&D 100 awards for innovative solutions in radiation effects testing.
• Generate Research Publications and Present at Leading Technical…