Research Associate, Epitaxy

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The Quantum and Nanotechnologies (QN) Research Centre is seeking a Research Associate in Epitaxy to support its research programs in advanced photonic and quantum technologies. The successful candidate will share the organization’s core values of integrity, excellence, respect, and creativity, and will contribute to research activities that strengthen the NRC’s capabilities in III–V semiconductor technologies.

The primary responsibility of this position is to support the goals of the NRC and the QN Research Centre through the research, development, and application of III–V epitaxial growth techniques for optoelectronic and quantum devices.

• Develop and troubleshoot a molecular beam epitaxy laboratory dedicated to growth of arsenide‑ and antimonide‑based III–V semiconductor heterostructures.
• Design and grow advanced epitaxial structures and characterize them using optical and structural analysis tools (X‑ray diffraction, photoluminescence spectroscopy).
• Conduct cutting‑edge research on III–V MBE structures for optoelectronic and quantum devices, including quantum well diode lasers, quantum cascade lasers, interband cascade lasers, two‑dimensional electron gas structures, and infrared and terahertz detectors.
• Contribute to the development of new research proposals, support project management activities, provide technical services to NRC clients, and input into overall research direction and priorities.
• Collaborate with multidisciplinary teams and external partners on NRC priority and client‑driven research projects.

Applicants must demonstrate within the content of their application that they meet the following screening criteria:

• PhD in Physical Sciences, Electrical Engineering or a field related to semiconductor materials growth, earned within the last five years or expected within the next six months.

• Experience operating and maintaining III‑V (arsenide or antimonide) MBE growth systems.
• Experience designing and growing III‑V MBE structures for optoelectronic and/or quantum devices.
• Experience characterizing III‑V wafers and epitaxial structures, including X‑ray diffraction (XRD); photoluminescence (PL) spectroscopy is an asset.
• Experience ensuring safe operation of an III‑V MBE facility and handling hazardous semiconductor materials and waste.

• Reliability Status: verification of background information over a period of 5 years is required.
• Expert ability to grow epitaxial III‑V semiconductors using MBE.
• Strong knowledge of semiconductor physics and devices.
• Expert ability to conduct complex bandgap engineering for compound semiconductors.
• Knowledge of WHMIS and Occupational Health & Safety regulations.
• Knowledge of microfabrication techniques and standard process flows for optoelectronic and quantum device fabrication.
• Research – Communication (Level
  2)
• Research – Creative thinking (Level
  3)
• Research – Initiative (Level
  2)
• Research – Teamwork (Level
  2)

• Relocation assistance will be determined in accordance with the NRC's directives.
• A pre‑qualified list may be established for similar positions for a one year period.
• Travel may be required.
• Preference will be given to Canadian citizens and permanent residents of Canada. Please include citizenship information in your application.
• The incumbent must adhere to safe workplace practices at all times.
• We thank all those who apply, however only those selected for further consideration will be contacted.

Please direct your questions to the requisition number 24872.

Closing Date: 17 February 2026‑23:59 Eastern Time

* If you are a current term or continuing employee at NRC, please apply through the Success Factors Careers module from your NRC computer.