Frequency Devices and Circuits

High Frequency Devices and Circuits role at ORAU

Organization: National Aeronautics and Space Administration (NASA)

Reference Code: 0047-NPP-MAR
26-JPL-Tech Dev

How to apply: All applications must be submitted in Zintellect. Please visit the NASA Postdoctoral Program website for application instructions and requirements:

How to Apply

| NASA Postdoctoral Program (orau.org)

Final date to receive applications: 3/1/2026 6:00:59 PM Eastern Time Zone

The NASA Postdoctoral Program (NPP) offers unique research opportunities to highly talented scientists to engage in ongoing NASA research projects at a NASA Center, NASA Headquarters, or at a NASA-affiliated research institute. These one- to three-year fellowships are competitive and are designed to advance NASA’s missions in space science, Earth science, aeronautics, space operations, exploration systems, and astrobiology.

This research area is focused on developing semiconductor based devices and circuits operating in the 100 GHz to 5000 GHz frequency range. The devices will be packaged into components that will enable the next generation of NASA instruments for Astrophysics, Earth remote sensing and planetary discovery and exploration. GaAs based planar Schottky diodes working in the millimeter and submillimeter frequency range have seen extensive use as detectors and multipliers.

Novel device design concepts that might lead to higher intrinsic efficiencies are strongly encouraged. Similarly, novel circuit configurations that increase functionality per chip or leapfrog current technological boundaries are also encouraged. Device fabrication processes that allow for fast turnaround prototyping with high yields and low critical dimensions can be validated at the Micro Devices Laboratory (MDL). The MDL at JPL is a world class semiconductor device fabrication facility that can allow device researchers access to state-of-the-art fabrication and characterization tools.

References:

• I. Mehdi, et al., “THz Multiplier Circuits,” Proceedings of the IEEE-MTTS Symposium, June 2006.
• I. Mehdi, et al., “Submillimeter-Wave Schottky Diode Receivers,” Proceedings of the Joint 32nd Intl. Conf. on Infrared and Millimeter-Waves and 15th. Intl. Conf. on Terahertz Electronics, Cardiff, United Kingdom, Sept. 2007.

Location: Jet Propulsion Laboratory, Pasadena, California

Field of science: Technology Development

• Imran Mehdi – Imran.
  
  Mehdia.gov,

Eligibility is currently open to:

• U.S. Citizens
• U.S. Lawful Permanent Residents (LPR)
• Foreign Nationals eligible for an Exchange Visitor J-1 visa status
• Applicants for LPR, asylees, or refugees in the U.S. at the time of application with
  1) a valid EAD card and
  2) I-485 or I-589 forms in pending status

Eligibility requirements: Doctoral Degree

If you have questions about this opportunity, please email npp