Lead Memory Design Engineer, DRAM​/HBM Innovation

Micron Technology, Inc in Richardson, Texas, seeks a Principal Memory Design Engineer to design, simulate, and optimize DRAM circuits while leading layout processes and ensuring robust verification and reliability. You will collaborate cross-functionally to support manufacturability and oversee project activities from design through to validation.

The successful candidate will have deep expertise in DRAM architecture and experience with tools like Cadence Virtuoso, FINESIM, HSPICE, and VERILOG. Micron offers competitive benefits designed to promote personal wellbeing and professional growth.

Consider building your career as a Lead Memory Design Engineer, DRAM/HBM Innovation at Micron Technology, Inc.

As a Lead Memory Design Engineer, DRAM/HBM Innovation, you will play an important part at Micron Technology, Inc. in Richardson, TX, United States.

We invite applications for the Lead Memory Design Engineer, DRAM/HBM Innovation position located in Richardson, TX, United States.