Memory Design Engineer: AI-Driven DRAM & CMOS

Micron Technology, Inc. in Richardson, Texas, is seeking a Staff Memory Design Engineer to design, simulate and optimize DRAM circuits, collaborating across global teams to deliver high-quality memory products.

You will use Cadence Virtuoso, FINESIM, HSPICE and VERILOG to model circuits, validate silicon, and drive floor planning and performance. A BS or MS in EE and 6+ years in DRAM design are preferred.

We are looking to fill the Staff Memory Design Engineer: AI-Driven DRAM & CMOS position at Micron Technology, Inc. in Richardson, TX, United States.

Take a moment to read everything above and see whether this role is right for you.

This posting is for the Staff Memory Design Engineer: AI-Driven DRAM & CMOS role at Micron Technology, Inc., based in Richardson, TX, United States.

The Staff Memory Design Engineer: AI-Driven DRAM & CMOS role at Micron Technology, Inc. is now open for applications in Richardson, TX, United States.