Lead Memory Design Engineer: DRAM & HBM

Micron Technology in Texas is seeking a Principal Design Engineer to architect high‑performance DRAM circuits for advanced memory nodes. You will lead layout, verification, and silicon validation with cross‑functional teams to deliver scalable, manufacturable solutions.

The role requires strong CMOS/VLSI background and hands‑on Cadence Virtuoso experience, plus circuit simulation using FINESIM, HSPICE, and Verilog.

We are seeking a motivated Lead Memory Design Engineer: DRAM & HBM to join Micron Technology, Inc. in Richardson, TX, United States.

This is a great role to take on the Lead Memory Design Engineer: DRAM & HBM role at Micron Technology, Inc.

As a Lead Memory Design Engineer: DRAM & HBM, you will play an important part at Micron Technology, Inc. in Richardson, TX, United States.

We invite applications for the Lead Memory Design Engineer: DRAM & HBM position located in Richardson, TX, United States.