Memory Design Engineer — DRAM & HBM Innovation

Micron Technology is seeking a Staff Design Engineer to design, simulate and optimize DRAM circuits, collaborating with global teams to deliver manufacturable, high‑quality memory products. You will drive innovation in future memory generations and contribute to silicon‑to‑system development.

The role emphasizes CMOS circuit design, verification, and layout leadership, with responsibilities spanning schematic edits, floor planning, and design reviews to ensure performance and cost efficiency.

We are looking to fill the Staff Memory Design Engineer — DRAM & HBM Innovation position at Micron Technology, Inc. in Richardson, TX, United States.

We appreciate your interest in this position.

Join Micron Technology, Inc. and contribute to our ongoing work.

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This posting is for the Staff Memory Design Engineer — DRAM & HBM Innovation role at Micron Technology, Inc., based in Richardson, TX, United States.