HBM Memory Design Engineer — Innovate -Gen Memory

Micron Technology is seeking a New College Grad Memory Design Engineer (HBM) in Richardson, TX. You will design, optimize, and validate memory, logic, and analog circuits for HBM products, collaborating with design, verification, process, and product teams to ensure manufacturability.

You will engage in parasitic modeling, validation, reticle experiments, and tape-out support, using AI-assisted design and industry-standard EDA tools to accelerate development cycles.

This posting is for the HBM Memory Design Engineer — Innovate Next-Gen Memory role at Micron Technology, Inc., based in Richardson, TX, United States.

We are looking to fill the HBM Memory Design Engineer — Innovate Next-Gen Memory position at Micron Technology, Inc. in Richardson, TX, United States.

The HBM Memory Design Engineer — Innovate Next-Gen Memory role at Micron Technology, Inc. is now open for applications in Richardson, TX, United States.