Senior Principal RF PA Design Engineer Cellphone & SATCOM Market

Senior Staff RF Switch Design Engineer
for High-Power Microwave & mmWave
Applications

Location: San Diego, CA (Preferred) or Remote
Employment Type: Full-Time or Contractor
Work Authorization: US Citizen, Green Card, or Authorized to work in the USA
Industry: High-Performance RF & Microwave Semiconductors

About Finwave Semiconductor
Finwave Semiconductor is a fabless semiconductor company, headquartered in Waltham (MA, USA) that uses innovative transistor designs and breakthrough process technologies to unlock the full potential of Gallium Nitride (GaN). Founded by prominent MIT innovators and driven by industry leaders, Finwave is shaping the future of RF Communications through revolutionary advancements in energy efficiency and performance for applications in markets such as aerospace and defense, mobile infrastructure, smartphones, medical devices, and cloud computing.

Senior Staff RF Switch Design Engineer
Finwave Semiconductor is seeking a Senior Staff RF Switch Design Engineer to lead the development of next-generation high-power microwave and millimeter-wave RF switches using our proprietary GaN-on-Silicon technology.
The successful candidate will develop RF switch architectures targeting power levels greater than 100 W and frequencies above 18 GHz, while achieving industry-leading insertion loss, isolation, switching speed, power handling, and reliability.

As a Senior Staff RF Switch Design Engineer, you will be a technical leader for Finwave’s high-power RF switch roadmap. You will lead circuit architecture, design, simulation, layout, tape-out, characterization, and optimization of GaN RF switch ICs for aerospace and defense, RADAR, electronic warfare, SATCOM, test and measurement, and communications applications.
You will work closely with Finwave’s device technology, modeling, packaging, test, applications, and product teams to translate our GaN-on-Silicon technology into differentiated RF products.

• RF Switch Design:
  Architect and design high-power SPST, SPDT, and multi-throw
  GaN RF switches for microwave and millimeter-wave applications.
• High-Power / High-Frequency Development:
  Develop switch solutions targeting
  greater than 100 W RF power handling and operation above 18 GHz.
• Circuit Optimization:
  Optimize insertion loss, isolation, return loss, power
  compression, harmonics, linearity, switching speed, bandwidth, and power handling.
• Device / Circuit Co-Optimization:
  Work with device and modeling teams to optimize
  GaN device structures for switching, including tradeoffs between Ron, Coff,
  breakdown voltage, parasitics, device geometry, and die area.
• High-Power Design:
  Analyze RF voltage and current stress, device stacking,
  nonlinear behavior, breakdown margin, thermal performance, mismatch conditions,
  and RF reliability.
• EM and Physical Design:
  Perform circuit and electromagnetic simulation of MMIC
  structures, transmission lines, passive structures, interconnects, and package
  transitions.
• Product Development:
  Own designs from feasibility and architecture through
  schematic design, layout, tape-out, characterization, qualification, and production
  release.
• Characterization:
  Perform on-wafer and packaged RF measurements, including
  small-signal and high-power CW and pulsed characterization.
• IP Development:
  Identify novel switch architectures and design techniques and
  contribute to Finwave’s intellectual property portfolio.
  Qualifications & Skills
• Master’s or PhD in Electrical Engineering, RF/Microwave Engineering, Applied
  Physics, or related field.
• 10+ years of RF, microwave, or MMIC semiconductor design experience, with
  demonstrated RF switch design expertise.
• Experience designing RF switches using GaN HEMT, GaAs pHEMT, PIN diode, SOI, or related technologies, with GaN…