NAND Memory Design Engineer – AI-Driven, -Speed
Listed on 2026-11-01
-
Engineering
Electronics Engineer
Micron Technology, Inc. in the United States is seeking a Design Engineer to contribute to memory product development by assisting with the design, layout, and optimization of datapath circuits for NAND flash memory, and to help shape major datapath architectural changes for higher speed and lower power.
You will collaborate with other engineers on planning, layout, and validation activities, drive silicon experiments with the PE team, and use AI tools to accelerate workflows while delivering
This is a genuine opportunity to take on the NAND Memory Design Engineer – AI-Driven, High-Speed role at Micron Technology, Inc.
Our team is growing, and we are hiring a NAND Memory Design Engineer – AI-Driven, High-Speed in CA, United States.
This opportunity is for the NAND Memory Design Engineer – AI-Driven, High-Speed role at Micron Technology, Inc.
(If this job is in fact in your jurisdiction, then you may be using a Proxy or VPN to access this site, and to progress further, you should change your connectivity to another mobile device or PC).