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GaN Power Device Design Engineer — R&D TCAD Focus

Listing for: XMax Inc.
Full Time position Listed on 2026-11-14
Job specializations:
Salary/Wage Range or Industry Benchmark: 65000 - 78000 USD Yearly USD 65000.00 78000.00 YEAR

Job Description & How to Apply Below

XMax Inc. is seeking a GaN Power Device Design Engineer to contribute to advanced vertical GaN transistor research and development in San Jose, CA.

The role is on-site and focused on design, simulation, and process-compatibility work within an exciting R&D program. Responsibilities include modeling and validating GaN devices, evaluating electrical characteristics, and collaborating with process engineers to optimize layouts and reliability.

This is an excellent position to take on the GaN Power Device Design Engineer — R&D TCAD Focus role at XMax Inc.

Please review the full job details above before applying.

If your experience matches this role, we encourage you to apply.

All applications are reviewed carefully by our team.

The position is based in San Jose, CA, United States.

This opportunity is part of our work in Engineering.

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