Principal Semiconductor Device Engineer
Listed on 2026-01-04
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Engineering
Systems Engineer, Electrical Engineering
1 week ago Be among the first 25 applicants
Vertical Semiconductor, a venture‑backed MIT spin‑out, is leading the development of vertical gallium nitride (GaN) power electronics to build the foundational power layer for the next generation of compute and AI.
Role DescriptionVertical Semiconductor is seeking a Principal Semiconductor Device Engineer to serve as a senior technical contributor in the development and commercialization of our vertical GaN power device technology. This is a hands‑on role is intended for an engineer with around 10-20 years of semiconductor R&D experience who can operate at the intersection of device physics, process integration, and manufacturability.
In this role, you will provide deep technical leadership across device architecture, process development, modeling, and characterization, while working closely with cross‑functional partners in epitaxy, process engineering, packaging, reliability, and systems. You will play a critical role in defining device roadmaps, de‑risking technology transitions, and guiding decisions that directly impact product performance and scalability.
This position offers the opportunity to help shape a world‑changing power electronics platform at a pivotal stage, with direct influence on the company’s technical direction and long‑term success. We prefer candidates who can work from our office at Greentown Labs (Somerville, MA).
Key Responsibilities- Serve as atechnical subject‑matter expertfor vertical GaN and wide‑bandgap power devices across the full R&D lifecycle, from concept through early production readiness
- Lead the definition and evolution of device architectures, performance targets, and design trade‑offs for next‑generation vertical GaN power devices
- Drivedevice modeling, simulation, and analytical understandingto guide design optimization, scaling strategies, and reliability improvements
- Plan and executedevice development programs in shared fabs and external foundries, including technology transfer and process co‑development
- Partner closely with internal and external teams onCMOS‑compatible GaN process integration, yield learning, and manufacturability
- Provide technical leadership infailure analysis, reliability physics, and root‑cause investigations for wide‑bandgap power devices
- Oversee and interpreton‑wafer and discrete device characterization, including DC, CV, dynamic, and high‑power testing
- Develop and review
GDS layouts, test structures, and evaluation vehicles to support device learning and validation - Support system‑level understanding throughapplication evaluation boards, measurements, and correlation to device behavior
- Mentor junior engineers and influence technical best practices throughinformal technical leadership, design reviews, and knowledge sharing
- Contribute to IP development, publications, and external technical engagements as appropriate
- PhD or equivalent industry experience in Electrical Engineering, Physics, Materials Science, or Device Engineering
- Approximately
15–25 years of professional R&D experience in semiconductor device development - Deep expertise inGaN or other wide‑bandgap semiconductors (e.g., SiC), with a strong preference for power device experience
- Demonstrated track record of technical impact and innovation in advanced device development programs
- Extensive experience withpower device designin GaN and/or SiC, including vertical device concepts
- In‑depth understanding ofsemiconductor manufacturing processes, integration challenges, and yield considerations
- Proven experience working inshared fab and foundry environments, including external technology transfers
- Strong proficiency inTCAD simulationfor device physics, scaling, and optimization
- Advanced data analysis skills using
Python, MATLAB, or equivalent tools - Hands‑on experience with
GDS layoutand test structure design - Expertise inwide‑bandgap power device failure analysis and reliability physics
- Experience with on‑wafer automated DC/CV/dynamic testing and discrete component characterization
- Ability to performanalytical calculations, simulations, design, build, and measureapplication evaluation boards as needed
- Excellent…
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