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Principal MOCVD Engineer

Job in South Plainfield, Middlesex County, New Jersey, 07080, USA
Listing for: Glint Tech Solutions LLC
Full Time position
Listed on 2026-09-12
Job specializations:
  • Engineering
    Process Engineer, Materials Engineering, Quality Engineering, Manufacturing Engineer
Salary/Wage Range or Industry Benchmark: 140000 - 210000 USD Yearly USD 140000.00 210000.00 YEAR
Job Description & How to Apply Below

Position Overview

We are seeking an experienced Principal MOCVD Engineer to lead epitaxial growth activities supporting the development and production of III-V semiconductor laser and detector materials, including DFB and EML devices
.

This role will be responsible for MOCVD epitaxial growth, material characterization, reactor performance, process optimization, and production support. The ideal candidate brings strong hands-on experience in III-V semiconductor epitaxy and MOCVD crystal growth
, with a focus on improving material quality, device performance, yield, and manufacturing reliability.

Key Responsibilities
  • Lead and coordinate MOCVD epitaxial growth and material characterization activities for laser manufacturing and R&D.
  • Develop and optimize epitaxial growth processes for III-V semiconductor laser and detector materials.
  • Support the development and production of DFB, EML, and related optoelectronic devices
    .
  • Improve material quality, device performance, and production yield through continuous process optimization.
  • Maintain MOCVD reactor performance, reliability, and operational efficiency.
  • Troubleshoot epitaxial growth, material, and equipment-related issues.
  • Collaborate closely with device, process, manufacturing, and R&D engineering teams.
  • Provide technical guidance and support to MOCVD engineers and technicians.
  • Support production scheduling and development priorities.
  • Maintain technical documentation and training materials in accordance with ISO 9000 quality standards.
  • Ensure compliance with laboratory and manufacturing safety requirements.
Qualifications
  • 5+ years of hands-on experience in MOCVD crystal growth of III-V semiconductor materials
    , preferably for semiconductor lasers or related optoelectronic devices.
  • Strong knowledge of epitaxial growth processes and materials characterization
    .
  • Experience with DFB, EML, laser diode, photodetector, or related photonic devices strongly preferred.
  • Experience operating, optimizing, and troubleshooting MOCVD reactors
    .
  • Master's degree or Ph.D. in Materials Science, Chemistry, Physics, Electrical Engineering, or a related field
    .
  • Strong analytical, problem-solving, communication, and cross‑functional collaboration skills.
  • Experience supporting production environments and yield improvement is preferred.
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