Molecular Beam Epitaxy; MBE Engineer shift

Join to apply for the Molecular Beam Epitaxy (MBE) Engineer - (6:00pm - 3:00am shift) role at AOI
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The MBE (Molecular Beam Epitaxy) Engineer manufactures InP‑laser structures with an MBE system, records and tracks the data of InP‑laser wafer growth, and is responsible for routine maintenance and calibration of equipment, wafer growth and characterization, monitoring and interpreting characterization results for the multi‑disciplinary team of device fabrication and manufacturing, and ensuring quality to control yields and performance. Depending on experience and education, a Senior Engineer position may be offered.

The Senior Engineer candidate should demonstrate the capability failure or improvement areas in the MBE process without detailed instructions from management.

• Independently and professionally operate MBE growth and characterization of InP‑based materials.
• Take system ownership and be responsible for production and system service.
• Measure epitaxial wafers by using structural, optical, and electrical characterization tools.
• Collect and input production and growth data in the database.
• Track device and equipment’s performance and conduct failure analysis.
• Enter characterization results into reports to monitor yield and performance.
• Monitor/chart characterization results and communicate those through written reports to improve yield and performance.
• Study new equipment and upgrade parts as needed.
• Maintain equipment, including preventative and corrective maintenance, and work with vendors to repair equipment when on‑site service is unavailable.
• Lead troubleshooting, calibration of equipment, and process qualification.
• Log maintenance items and predict the future needs to avoid downtime.
• Improve process control to enhance quality and yield.
• Develop and maintain Standard Operating Procedure.
• Work with R&D team on the new structure design and provide feedback from the growth point of view.

• Bachelor’s degree in Chemical, Electrical Engineering, Material Science, Physics, or related discipline is required;
  Master’s degree or PhD preferred.
• A minimum of 3 years of experience in experiment design, process control, and improvement in a semiconductor laboratory or fabrication is required.
• Hands‑on experience in semiconductor characterization techniques, such as photoluminescence, X‑ray diffraction, optical microscopy, etc. is preferred.
• Knowledge of compound semiconductor device theory is desired.
• Experience operating MBE or MOCVD epitaxy growth systems is a plus.
• Robust analysis and problem‑solving skills.
• Comfortable to work under a cleanroom hood and without any makeup.
• Willing to work flexible hours upon production request which may include 2nd shift and night shift production work schedule.
• Ability to lift and hold 20 lbs steady for 30 seconds.

This position will be on‑site based in Sugar Land, Texas.

In addition to competitive salary, AOI offers

• Flexible and competitive health (medical, dental, vision) plans to meet individual and family needs.
• Employer matching on 401(k) deferrals.
• Generous PTO policy, with unused PTO payout at the end of the year.
• Relocation package available within the US.
• Immigration sponsor ships (must be currently authorized to work in the US).

We do not accept unsolicited proposals from third‑party recruiters or agencies. Contacting hiring managers directly may result in disqualification of submissions.

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