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Lead Epi Engineer

Listing for: Coherent
Full Time position Listed on 2026-11-15
Job specializations:
Salary/Wage Range or Industry Benchmark: 100625 - 172250 USD Yearly USD 100625.00 172250.00 YEAR

Job Description & How to Apply Below

Job-:
Fremont, CA, United States;
Sunnyvale, CA, United States Workplace:
On-site

Schedule:

Full time Posted:
Pay Scale: $100,625 - $172,250 per year

Linked

In: #LI-JF1

About Indium Phosphide (InP) Technology
The world’s communications infrastructure depends on semiconductor lasers, and particularly those based on indium phosphide technology. Indium phosphide lasers are engineered to emit at wavelengths that are optimal for long-distance transmission through fiber optics. In short, they enable the optical networks that form the global internet.
Coherent’s broad portfolio of InP components includes application-specific Fabry-Pérot lasers, directly modulated lasers (DMLs), and tunable lasers. It also includes photodiodes for high-speed receivers and power monitoring. In 2022, we introduced 200 Gbps indium phosphide electro-absorption modulated lasers (EMLs) for high-speed datacenter transceivers. This design provides our customers with the most advanced, robust, and cost-competitive laser devices for their 800G and next-gen 1.6T datacom transceiver designs.

Our world-class and highly reliable InP technology platform is one of the very few in the industry that has been proven, with more than one hundred million lasers in the field deployed over the last decades.

The position involves implementation, development, and then subsequent continual process improvement activity surrounding the production of GaAs/InP-based optoelectronic devices by MOCVD methods. Emphasis is placed on new product development, statistical analysis and process control functionality required to support high volume 24/7 manufacturing operation.

Primary

Duties & Responsibilities The position involves the implementation, development and then subsequent continual process improvement activity surrounding the production of InP-based optoelectronic devices by MOCVD methods. Emphasis is placed on new product development, statistical analysis and process control functionality required to support a R&D and manufacturing operation. The engineer should assume flexibility in working hours to ensure full communication and process compliance in support of on-shift-based technical and operations-based personnel.

Interaction with Design & Product teams to plan and execute growth developments aimed at realizing newly conceived epitaxial designs and structures.

Explore process variants aimed at providing improvement in existing growth workflows. Areas of improvement can be generically classified in terms of capacity, yield, throughput, and or costs.

Ensure compliance and minimize causes of variation in currently defined production processes and outputs.

Presentation of development results to senior management and/or interdisciplinary-based teams.

Education & ExperienceM.S. in Ch.E., M.E. Physics, E.E., or related fields, or equivalent experience.

A minimum of 5 years experience with MOCVD crystal growth of GaAs/InP-based materials and/or compound semiconductor processing is preferred but not essential.

Skills Prior experience with standard epitaxial characterization tools such as XRD, ECV, PL, and reflectance.

Ability to work in a small group and take initiative.

Familiarity with SPC, Gage, DOE, and other aspects of manufacturing and data analysis. JMP experience a plus.

Strong interpersonal, teaming, and problem-solving skills.

Working Conditions Primarily on-site, occasional travel to other Coherent sites possible8-hour weekday work schedule with occasional night or weekend support of production epiMust be able to function in a fast-paced environment, carrying out multiple projects at a time.

Work primarily in an office environment using computer-based applications and systems.

Regularly interact with manufacturing and production environments as…

Position Requirements

5+ Years work experience
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