Director, Ultra--Voltage SiC Device Technology

Job Purpose:

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.

With more than 30 years of combined expertise in wide bandgap technologies, GaNFast power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications.

We are seeking a Director of Ultra-High-Voltage SiC Device Technology to join our fast-growing, collaborative team. The ideal candidate is self-motivated, energetic, and able to thrive in a high-growth, innovative environment, contributing directly to technologies that are shaping the future of power electronics.

The Director of Ultra-High-Voltage SiC Device Technology reports to the SVP & Chief Technology Officer and owns device and process technology for our ultra-high-voltage SiC roadmap, from 3.3 kV to 10 kV and beyond: MOSFETs, PiN diodes, JFETs and bipolar devices. The director leads U.S. government-funded technology programs as technical lead and principal investigator, and works hands-on with foundry and research partners to take new device concepts from simulation to qualified silicon.

Key

Responsibilities and Duties:

Ultra-High-Voltage Device Technology:
Lead device architecture and process technology for ultra-high-voltage SiC devices (3.3 kV to 10 kV+), including MOSFETs, PiN diodes, JFETs and IGBTs or other bipolar devices.

Government Program Leadership:
Serve as technical lead and principal investigator on U.S. government-funded development programs: define technical plans, own deliverables and milestones, and represent Navitas in program reviews.

Process Integration with Partners:
Define process flows and key modules (implantation and activation, gate oxide, ohmic contacts, edge termination, passivation) with foundry and research partners, and drive split-lot experiments to closure.

Design, Simulation and Characterization:
Direct device simulation (TCAD), mask design reviews and characterization plans, and translate results into design and process changes.

Reliability and Test Methods:
Establish ultra-high-voltage characterization and reliability methods (HTRB, HTGB, avalanche and short-circuit ruggedness) with the reliability and test teams.

Team Development:
Mentor device engineers across U.S. and India sites, and help grow the ultra-high-voltage SiC team.

IP and Customer Engagement:
Build Navitas' intellectual property through patents and selected publications, and support customers and business units on ultra-high-voltage product definition.

Knowledge, Skills, Abilities, and Other Characteristics (KSAO’s)
Deep understanding of SiC device physics for blocking voltages from 3.3 kV to 10 kV+, including drift-layer design, edge termination and bipolar degradation

Strong knowledge of SiC process modules: implantation and activation, gate oxidation, ohmic contacts, etching and passivationTCAD-driven device design and disciplined, data-driven experiment planning

Familiarity with high-voltage test and reliability methods (HTRB, HTGB, avalanche, short circuit)
Strong analytical and problem-solving skills

Excellent technical writing and communication, including proposals and government program reporting

Comfortable working with foundries, research institutes and teams across global…