Director,Ultra--Voltage SiC Device Technology Job Torrance area,California USA,Engineering

Position: Director, Ultra-High-Voltage SiC Device Technology
Job Purpose

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.

Key Responsibilities And Duties

Ultra-High-Voltage Device Technology:
Lead device architecture and process technology for ultra-high-voltage SiC devices (3.3 kV to 10 kV+), including MOSFETs, PiN diodes, JFETs and IGBTs or other bipolar devices.
Government Program Leadership:
Serve as technical lead and principal investigator on U.S. government-funded development programs: define technical plans, own deliverables and milestones, and represent Navitas in program reviews.
Process Integration with Partners:
Define process flows and key modules (implantation and activation, gate oxide, ohmic contacts, edge termination, passivation) with foundry and research partners, and drive split-lot experiments to closure.
Design, Simulation and Characterization:
Direct device simulation (TCAD), mask design reviews and characterization plans, and translate results into design and process changes.
Reliability and Test Methods:
Establish ultra-high-voltage characterization and reliability methods (HTRB, HTGB, avalanche and short-circuit ruggedness) with the reliability and test teams.
Team Development:
Mentor device engineers across U.S. and India sites, and help grow the ultra-high-voltage SiC team.
IP and Customer Engagement:
Build Navitas' intellectual property through patents and selected publications, and support customers and business units on ultra-high-voltage product definition.

Knowledge, Skills, Abilities, And Other Characteristics (KSAO’s)

Deep understanding of SiC device physics for blocking voltages from 3.3 kV to 10 kV+, including drift-layer design, edge termination and bipolar degradation
Strong knowledge of SiC process modules: implantation and activation, gate oxidation, ohmic contacts, etching and passivation
TCAD-driven device design and disciplined, data-driven experiment planning
Familiarity with high-voltage test and reliability methods (HTRB, HTGB, avalanche, short circuit)
Strong analytical and problem-solving skills
Excellent technical writing and communication, including proposals and government program reporting
Comfortable working with foundries, research institutes and teams across global time zones
Leading by example

Qualifications

Required Qualifications

Ph.D. in Electrical Engineering, Physics, Materials Science or a related field.
12+ years of industrial or national-lab research and development in SiC power devices, with a focus on ultra-high-voltage switches.
Demonstrated design, fabrication and characterization of SiC devices rated 3.3 kV or above, such as MOSFETs, BJTs, IGBTs, thyristors or PiN diodes.
Hands-on depth in SiC process technology: implantation, oxidation, ohmic contacts, etching and edge termination.
Experience as technical lead or principal investigator on externally funded programs, including proposals, reporting and milestone delivery.
A strong record of publications and/or patents in SiC power devices.
Must be a U.S. person (see Export Control below).

Preferred Qualifications

Experience with SiC integrated circuits or high-temperature SiC electronics.
Experience with bipolar SiC devices and their reliability, such as bipolar degradation and basal plane dislocation control.
Experience with U.S. Department of Defense or Department of Energy programs.
Experience transferring device technology to a commercial 150 mm or 200 mm SiC foundry.
Experience leading engineers across multiple sites and time zones.

What We Offer

A front-row seat to the future of power electronics. Work on cutting-edge GaN and SiC technologies that are transforming AI data centers, electrification, and global energy infrastructure.
A fast-paced, high-energy environment. We move quickly, make decisions with purpose, and empower employees to take ownership and drive real impact from day one.
A team that shows up and delivers. We care…

Director, Ultra--Voltage SiC Device Technology