SiGe HBT Device Modelling Engineer; College Graduate
Listed on 2025-12-09
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Engineering
Electrical Engineering, Electronics Engineer
Location: Essex Junction
About Global Foundries
Global Foundries (GF) is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GF makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit
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Summary of RoleGLOBALFOUNDRIES (GF) is seeking Compact Modelling Engineer to develop SiGe bipolar transistor models actively used by clients to design Radio Frequency (RF), mm-wave integrated circuits (ICs) using next-generation GF RF technologies. The role demands familiarity with SiGe bipolar transistor device engineering, semiconductor manufacturing technologies & processes. Strong device physics knowledge to enable developing physics-based, geometry-scalable, mathematical models. Familiarity with industry standard models such as Gummel-Poon, Vertical Bipolar Intercompany (VBIC), and High Current Model (HiCUM) are desired to obtain accurate SiGe bipolar transistor characteristics suitable for high frequency applications.
Candidate should demonstrate familiarity of Electronic Design Automation (EDA) tools - such as Cadence Virtuoso, Advanced Design System (ADS) and simulation software is desired. Familiarity with device characterization using Direct Current (DC), Scattering parameter and RF characterization is highly desirable. Familiarity of parameters extraction from measurement data, their implementation in Spectre and/or Verilog-A model cards, & their effect on simulation results and dependency on model to silicon hardware correlation.
Mastery of verbal and written communication are a must to successfully interact with highly technical teams, engage with highly versed clients and to provide documentation of the highest quality.
Fluency in shell scripting, multi-paradigm (Matlab/R) and high-level programming languages (Python/Perl/Lisp) are preferred additions.
Candidate will be a member of an established technical team, driven by collaborative innovation, creative problem solving and high-performance culture. Demonstrated analytical & positive thinking, desire to innovate, accountability for your work and people skills are all foundational.
Essential Responsibilities- Developing semiconductor device compact models
- Defining device characterization design structures for device model parameter extraction
- Device Characterization and data analysis
- Device Model to Hardware correlation (model accuracy / quality assurance checking)
- Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.
- Education – Graduating with PhD in Electrical Engineering, Microelectronics or related field from an accredited degree program.
- Must have at least an overall 3.5 GPA and proven good academic standing.
- Language Fluency - English (Written & Verbal)
- Semiconductor device physics / characterization knowledge
- Device Compact model extraction / development experience
- Familiarity with industry standard compact models:
Gummel-Poon, VBIC, and HiCUM - Proficient with design simulation tools such as Cadence Spectre or Keysight ADS performing DC, S-parameter, transient, large signal simulations
- Design Layout experience using the Cadence Virtuoso or ADS flow
- Data analysis and problem solving
- Fluency in shell scripting, multi-paradigm (Matlab/R) and high-level programming languages (Python/Perl/Lisp)
- Prior related internship or co-op experience
- Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
- Project management skills, i.e. the ability…
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