Postdoctoral Appointee - Radiation Effects, Onsite

Job Overview

The Applied Nuclear Technologies department is seeking a motivated experimentalist for a post-doctoral position aimed at advancing the field of radiation detection and effects. We have ongoing research in understanding how particle-induced ionization and atomic displacements impact microelectronic device performance in a variety of semiconductors. The successful candidate will work on radiation effects experiments on electronic components exposed to different particles such as neutrons, photons, ions, and electrons and explore the science of defects in advanced semiconductor devices using advance data analysis, machine learning, and/or novel in-situ measurement techniques.

This candidate will work in both office and laboratory environments, and in radiation and contamination areas.

We are looking for a PhD in Electrical Engineering, Nuclear Engineering, or Physics who is passionate about designing and executing complex in-situ experiments.

On any given day, you may be called on to:

• Perform hands-on experimental work
• Writing proposals for research projects and facility access
• Disseminating research findings at technical conferences and in scholarly papers
• Conducting radiation transport modeling, designing circuits and detectors, and performing data analysis.

Due to the nature of the work, the selected applicant must be able to work onsite.

• A PhD in Electrical Engineering, Nuclear Engineering, Physics or a closely related field conferred within five years prior to employment.
• Data analysis experience
• The ability to obtain and maintain a DOE Q-clearance

• Experience executing complex time sensitive experiments.
• Basic understanding of semiconductor devices (diodes, transistors, Op Amps, and integrated circuits).
• A willingness to travel 1+ week to external test facilities periodically
  
  Experience with laboratory testing, electronic instrumentation, and test operations
• Experience understanding the radiation effects in semiconductor devices under radiation testing.
• Electrical circuit response modeling, circuit design, and programming for automation and analysis.
• Previous experience using techniques such as Deep-Level Transient Spectroscopy (DLTS), Deep-Level Optical Spectroscopy (DLOS), or measuring gain degradation of a device in a radiation field.
• Previous experience in how to minimize signal attenuation and maximize data collection in ultra-fast pulsed test environments.
• Outstanding communication skills, a willingness to work in a collaborative team environment, and demonstrated interest in interdisciplinary research
• Scientific programming for efficient data collection and analysis

As a part of the Radiation & Electrical Sciences Center, the Applied Nuclear Technologies Department (org. 1314) explores, develops, and applies physics and engineering principles to many areas of nuclear and electrical engineering. The Department is responsible for the Device Physics, Energetic Neutrons, and Transient Neutrons portion of the Sandias Weapon Survivability (WS) Program. Our group conducts high fidelity radiation effects experiments on semiconductor devices and materials at facilities such as the Annular Core Research Reactor, the National Ignition Facility, and the Laboratory for Laser Energetics in support of national security missions.

We collaborate with the Nuclear Facilities Operations and the Radiation Modeling and Metrology departments at Sandia to
1) tailor and characterize appropriate testing environments in the TA-V nuclear facilities to meet customer needs and
2) design and conduct nuclear criticality experiments in the Sandia Critical Experiments (SCX) Facility for the NNSA DOE Nuclear Criticality Safety Program (NCSP) and developed and deliver Hands-on training with critical experiments for the NCSP. We operate and maintain a semiconductor devices laboratory which uses a variety of characterization techniques including Deep-Level Transient Spectroscopy (DLTS) to analyze native defects and radiation-induced defects in semiconductor devices and to understand the damage mechanisms in devices exposed to radiation.

This team is…