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Microelectronics Process Integration Engineer; 4th shift

Job in Andover, Essex County, Massachusetts, 05544, USA
Listing for: Prattwhitney
Full Time position
Listed on 2026-05-31
Job specializations:
  • Engineering
    Manufacturing Engineer, Quality Engineering, Electrical Engineering, Process Engineer
Salary/Wage Range or Industry Benchmark: 68900 - 131100 USD Yearly USD 68900.00 131100.00 YEAR
Job Description & How to Apply Below
Position: Microelectronics Process Integration Engineer (4th shift)

Date Posted:

Location:

Andover, MA

Job Summary

As a member of the RF Microelectronics (RFM) Department, the individual will provide process and manufacturing engineering support for Raytheon’s microelectronics foundry in Andover, MA. The process code engineer is responsible for all aspects of manufacturing execution to fabricate and deliver compound semiconductor wafers to internal, DoD, or external customers. The ideal candidate will have a broad understanding of semiconductor tools, processing techniques, microelectronic circuit testing, and circuit design with expertise in one or more of these areas.

Statistical process control methods and lean manufacturing methods will be used to reduce rework and scrap and increase efficiency in the process line. The ability to work well in small, cross‑functional teams is essential.

What You Will Do
  • 4th shift support with core hours on Friday, Saturday, and Sunday daytime.
  • High degree of hands‑on engineering work with presence on the manufacturing floor (fab cleanroom).
  • Dispositioning wafers—determine scrap, rework, or acceptance.
  • Review in‑line electrical data trends and process control metrics.
  • Investigate scrap and rework events using root‑cause tools and approaches.
  • Maintain technical documentation (recipes, out‑of‑control action plans, FMEAs).
  • Collaborate with operations, quality, and engineering staff in dynamic team settings.
  • Manage changing projects and priorities based on the nature of the problems and commitments to customers or other project leads.
Qualifications
  • Typically requires a Bachelor's Degree in Science, Technology, Engineering or Mathematics (STEM).
  • Minimum of 2 years of prior relevant experience with semiconductor processing tools and techniques including photolithography, wet and dry etching, metal evaporation, metrology tools, and automated inspection systems.
  • Experience with semiconductor device structures, their electrical characteristics, & Manufacturing Execution Systems (MES).
  • Experience in statistical process control and lean manufacturing methods.
  • Ability to obtain and maintain a U.S. security clearance; U.S. citizenship is required.
Preferred Qualifications
  • Understanding of III‑V compound semiconductor devices, particularly Gallium Nitride and Gallium Arsenide HEMTs and SLS IR detectors.
  • Experience with characterizing, understanding, and improving semiconductor device quality and reliability.
  • Excellent communication skills with the ability to convey ideas and data effectively.
  • Ability to lead and coordinate technical projects with cross‑functional teams.
Salary

USD
68,900 –131,100 (based on experience and skill level).

Benefits
  • Medical, dental, vision, life insurance, short‑term and long‑term disability.
  • 401(k) match and flexible spending accounts.
  • Flexible work schedules, employee assistance program, employee scholar program, parental leave, paid time off, holidays.
  • Annual short‑term and/or long‑term incentive compensation programs (dependent on position level and collective‑bargaining agreement).
Equal Opportunity Employer

RTX is an Equal Opportunity Employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, age, disability, or veteran status. RTX provides affirmative action for qualified individuals with a disability and protected veterans in compliance with Section 503 of the Rehabilitation Act and the Vietnam Era Veterans’ Readjustment Assistance Act.

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