PostDoctoral Fellow; PREP

Research Title

Reliability testing of wide bandgap semiconductor power devices

This position is part of the National Institute of Standards (NIST) Professional Research Experience (PREP) program. The PREP program engages research staff and academic institutions to collaborate on scientific research. Employees in this position will perform technical work that underpins the scientific research of the collaboration.

• Build and fully characterize one or more dynamic testing circuits for stress‑testing of power devices, such as GaN HEMTs, under voltage or current transients.
• Evaluate dielectric breakdown at interfaces using AC gate stress testing under realistic loads.
• Perform advanced power‑cycling measurements to evaluate thermal stress and packaging failures.
• Present results at internal and external meetings and conferences.
• Write peer‑reviewed journal articles on novel and important research findings.

• Masters or Ph.D. in Electrical, Mechanical Engineering or a related field.
• Three years of relevant experience, including graduate research work.
• Proficient in PCB layout and circuit simulation/modeling.
• Familiarity with data analysis techniques and programming tools such as Python or MATLAB.
• Strong desire to collaborate with other researchers and be involved on related projects.
• Strong oral and written communication skills.
• U.S. citizen preferred.

Minimum and maximum salaries are based on Johns Hopkins University's good faith belief at the time of posting. The actual compensation will vary by location, skills, experience, and other factors.

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