RF GaN Engineer

RF GaN Engineer (Contract)

Location: Taiwan
Duration: 12-month contract
Start: ASAP (or mutually agreed)
Work Type: On-site / Hybrid (depending on project requirements)

We are seeking an experienced RF GaN (Gallium Nitride) Engineer to support a high-performance RF power electronics programme in Taiwan. The role focuses on the design, development, testing, and optimisation of GaN-based RF power amplifier systems used in advanced communication, defence, aerospace, or industrial applications.

This is a hands‑on engineering role working closely with multidisciplinary teams across RF design, semiconductor device engineering, system integration, and validation.

• Design and develop RF power amplifiers using GaN HEMT technology
• Work on high‑efficiency, high‑frequency RF circuits (e.g. L, S, C, X, or Ku band depending on application)
• Perform device modelling, simulation, and optimisation of GaN-based RF systems
• Develop matching networks, biasing circuits, and thermal management solutions

• Conduct RF performance testing including:
  • Load‑pull analysis
  • Power efficiency (PAE) optimisation
  • Linearity (IMD, ACPR)
• Support prototype bring‑up and lab‑based validation activities
• Debug RF performance issues at device, circuit, and system level

• Integrate GaN RF amplifiers into larger RF front‑end systems
• Collaborate with system engineers on impedance matching and RF chain optimisation
• Support thermal, mechanical, and packaging considerations for high‑power RF systems

• Work closely with semiconductor fabrication teams and foundries
• Interface with product, systems, and manufacturing engineering teams
• Support design reviews, technical documentation, and knowledge transfer

• Strong experience in RF power amplifier design using GaN technology
• Solid understanding of RF/microwave engineering principles
• Experience with high‑frequency design (e.g. GHz range systems)
• Proficiency in RF simulation tools (e.g. ADS, AWR Microwave Office, HFSS or equivalent)
• Hands‑on lab experience with RF test equipment (VNA, spectrum analyzers, load‑pull systems)
• Understanding of thermal effects and reliability in high‑power RF systems
• Experience in semiconductor device physics (GaN, SiC preferred)
• Strong debugging and analytical skills in RF environments
• Ability to work in a fast‑paced, hardware‑focused engineering environment

• Experience with GaN HEMT process technologies
• Background in defence, aerospace, telecom infrastructure, or radar systems
• Knowledge of RF packaging and thermal management techniques
• Experience working with Asian semiconductor or manufacturing ecosystems
• Familiarity with MMIC design and integration