NanoIC topic Investigation of write reliability in spin orbit torque-driven MRAM

/ [NanoIC topic] Investigation of write reliability in spin orbit torque-driven MRAM

Master internship - Leuven | More than two weeks ago

Turbo-charge the development of next-generation AI memory technology through the lens of spintronic devices!

Therapid growth of AI-driven applications today is pushing conventionalcharge-based memory technologies to their limits due to the concerns inreliability, scalability, and volatility. This pushes a pressing need for alternative memory solutions that offer faster operation, higher endurance, andnon-volatile data storage.

Spintronics,which leverages the electron’s spin in addition to its charge, offers apromising pathway for next-generation memory technologies. Magnetic Random-Access Memory (MRAM) combines these advantages, offering high enduranceand fast read/write speeds, making it a strong candidate for future memorytechnologies. Spin–Orbit Torque MRAM (SOT-MRAM) is one of the most promisingMRAM concepts with demonstrated reliability of its constituent magnetic tunneljunction (MTJ) devices up to 10 15 – 10 18 cycles forultra-low write latencies down to 200 ps, thereby making it an attractiveproposition for future AI-ready compute and high performance systems [1].

To advance SOT-MRAM toward practical applications, itis essential to enable deterministic write schemes, low power read/writeoperations, high endurance and application-relevant data retention metrics. The benefits of reliable magnetization switching at low currents are multi-fold, asit directly improves energy efficiency, device reliability, and endurance. Toensure reasonable data retention, the MTJ stacks are engineered to have strongperpendicular magnetic anisotropy, thus enabling reliable data storage withgood data integrity.

However, the switching current is typically inverselyrelated to retention in conventional MRAM technology, creating a fundamentaltrade-off. Therefore, understanding the relationship between switching current and magnetic anisotropy and thermal stability is crucial for designingenergy-efficient, nanoscale SOT-MRAM devices and guiding future materialdevelopment.

The aimof this internship is to investigate the impact of material systems and devicedesign engineering on the switching/write reliability and its correlation withthe thermal stability (= data retention) of SOT-MRAM cells using advanced electrical characterization techniques. This work will focus on elucidating therelationship between switching current and retention and, if time permits, itsevolution at reduced device dimensions. By studying the underlying switchingmechanisms through advanced electrical and physical characterization, this internship will contribute to enabling reliable switching in nanoscale SOT-MRAMand advancing scalable, energy-efficient memory technologies.

We seek a candidate with a physics or engineering background, a strong interest in experimental work, and a passion for cutting-edge science and technology, particularly in the fast-growing areaof memory technology.

Required educational background
:
Electrotechnics/Electrical Engineering, Materials Engineering, Nanoscience & Nanotechnology, Physics

The reference code for this position is 2026-INT-105
. Mention this reference code in your application.

Only for self-supporting students.

Therapid growth of AI-driven applications today is pushing conventionalcharge-based memory technologies to their limits due to the concerns inreliability, scalability, and volatility. This pushes a pressing need for alternative memory solutions that offer faster operation, higher endurance, andnon-volatile data storage.

Spintronics,which leverages the electron’s spin in addition to its…