Staff Engineer, APTD Dry Etch

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

The Advanced Packaging Technology Development (APTD) team at Micron drives the technologies that enable the AI era. We work hands‑on with global R&D, suppliers, and manufacturing teams to turn breakthrough ideas into production‑ready solutions. Our work sits at the intersection of innovation, scale, and real‑world impact—and collaboration is how we win.

Artificial intelligence is transforming the world, and High Bandwidth Memory (HBM) is at the center of that transformation. As a Senior or Staff Engineer on the Dry Etch R&D team, you will play a key role in developing and scaling plasma‑based etch processes that enable next‑generation packaging technologies. This role offers deep technical ownership, broad cross‑functional collaboration, and the opportunity to influence long‑term technology roadmaps from early research through high‑volume manufacturing.

• Develop and optimize dry etch process modules to meet performance, yield, and reliability requirements for advanced packaging products
• Drive process capability, cost, and variability improvements using data‑driven experimentation and equipment innovation
• Collaborate closely with process integration and adjacent process teams including Wet Etch, Films, Lithography, CMP, Wafer Trim, and Bonding
• Perform root‑cause and failure‑mode analysis and partner with equipment vendors to resolve complex process and hardware challenges
• Support global process transfer and readiness for high‑volume manufacturing, including occasional international travel

• Bachelor’s degree in Chemical, Mechanical, Electrical, Materials Science, Physics, Chemistry, Semiconductor Engineering, or related field with 5+ years of relevant dry etch experience
• OR Master’s or PhD in a related discipline with 3+ years of relevant dry etch experience in the semiconductor industry
• Demonstrated hands‑on R&D experience advancing process performance through structured experimentation
• Proven ability to apply DOE, data analysis, and first‑principles reasoning to complex process problems
• Ability to work independently while managing multiple technical priorities and program commitments

• Deep expertise in plasma etch processes and plasma–material interactions for advanced patterning
• Experience influencing technology direction, integration strategies, or long‑term process roadmaps
• Exposure to advanced packaging technologies such as TSV, RDL, hybrid bonding, or 2.5D/3D integration
• Proficiency in statistical process control and variability reduction methodologies
  
  Familiarity with Python, data automation, or GenAI‑enabled analysis for process development

As a world leader in the semiconductor industry, Micron is dedicated to your personal wellbeing and professional growth. Micron benefits are designed to help you stay well, provide peace of mind and help you prepare for the future. We offer a choice of medical, dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget.

Micron also provides benefit programs that help protect your income if you are unable to work due to illness or injury, and paid family leave. Additionally, Micron benefits include a robust paid time‑off program and paid holidays. For additional information regarding the Benefit programs available, please see the Benefits Guide posted on

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.