Process Integration Engineer - DRAM, DMTS
Listed on 2026-05-30
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Engineering
Electrical Engineering, Process Engineer, Systems Engineer, Manufacturing Engineer
Req – Process Integration Engineer – DRAM, DMTS
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
Micron is a global DRAM leader whose innovative builds push the boundaries of future semiconductors. We seek a dynamic BEOL Process Integration Expert with proven experience in developing, transferring, and optimizing advanced DRAM technologies. Our team enjoys solving complex integration challenges and improving yield, reliability, and manufacturability. This role suits ambitious candidates eager to make a big impact.
ResponsibilitiesIn this role, you will need to have strong semiconductor Process Integration skills in an R&D department. You will be developing the future generation DRAM technologies and contributing to Micron’s Technical Leadership Program (TLP), intended for individuals seeking to advance as technical leaders and industry innovators.
- Define and implement BEOL process flows, build rules, and specifications for advanced DRAM products.
- Lead troubleshooting and resolution of complex integration issues spanning multiple modules and fields.
- Drive yield improvement and reliability enhancement initiatives using data‑driven methodologies.
- Coordinate technology transfers, ensuring robust process qualification and rapid ramp to high‑volume manufacturing.
- Engage in industry benchmarking and collaborative projects to maintain technology leadership.
- Pathfind alternate architectures and enablers.
- Foster a culture of innovation, continuous learning, and operational excellence within the BEOL team.
- MS (required) or PhD or equivalent experience (preferred) in Electrical Engineering, Microelectronics, Materials Science, or a related area; more than 10 years of industry experience.
- Deep expertise in metallization, barrier/liner engineering, dielectric integration, and reliability solutions for next-generation DRAM nodes.
- Successful leadership of BEOL process development from R&D through pilot and high-volume manufacturing, including cross‑node and cross‑site technology transfers.
- Proficiency in statistical data analysis and advanced problem‑solving techniques.
- Strong leadership, communication, and project management skills.
- Recognized for creativity, adaptability, and a proactive approach to emerging challenges.
- Authored or co‑authored multiple patents and technical papers on DRAM BEOL integration.
- PhD degree in Electrical Engineering, Microelectronics, Materials Science or a related area.
- 10+ years of industry experience with next-generation DRAM nodes.
- Technical leadership skills in an R&D setting.
Micron is proud to be an equal‑opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.
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