Staff Engineer, Metals Implant DRAM

Staff Engineer, Metals Implant DRAM

Perform process development for CVD (Chemical Vapor Deposition) and ALD (Atomic Layer Deposition) films, ion implantation and CMOS device optimization. Apply materials characterization techniques such as X-ray photoelectron spectroscopy, x-ray diffraction, electron microscopy, secondary ion mass spectroscopy, resistance measurements and ellipsometry to characterize materials and make recommendations on vectors to improve materials performance towards program goals. Execute novel materials development and characterization, statistical process control, electrical characterization of CMOS devices, especially sense-amplifiers.

Ownership and experimental execution for high current, high energy and medium current implanters, as well as plasma doping systems. May telecommute part-time. Domestic and international travel is required.

Employer will accept a Ph.D. in Materials Science, Chemistry, Physics, Chemical Engineering or a related field.

Position requires:

• Chemical Vapor Deposition of films including metals and dielectrics
• Atomic Layer Deposition of films including metals and dielectrics
• X-ray photoelectron spectroscopy
• X-ray diffraction
• Electron Diffraction
• Resistance measurements
• Statistical Process Control
• Electrical Characterization of films and devices
• Design of Experiments
• Integration of multiple processes to form a device
• Capacitor devices including Metak-Insulator-Metal and Metal-Oxide Semiconductor devices with high K-value dielectrics

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.