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College Grad - Pathfinding Device Integration Engineer

Job in Boise, Ada County, Idaho, 83708, USA
Listing for: Micron Technology
Full Time position
Listed on 2026-07-18
Job specializations:
  • Engineering
    Electronics Engineer, Materials Engineering, Systems Engineer, Electrical Engineering
Salary/Wage Range or Industry Benchmark: 90000 - 130000 USD Yearly USD 90000.00 130000.00 YEAR
Job Description & How to Apply Below
Position: New College Grad - Pathfinding Device Integration Engineer

Req  New College Grad - Pathfinding Device Integration Engineer

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

Micron is seeking a Pathfinding Device Integration Engineer to help define and advance next-generation semiconductor device technologies. In this role, you will work at the intersection of device physics, materials science, and process integration, applying strong analytical and problem‑solving skills to transform innovative concepts into data-driven, manufacturable technology solutions. This position operates in an advanced R&D environment and collaborates closely with teams across device engineering, materials development, process integration, modeling, characterization, reliability, and design.

Responsibilities
  • Identify, define, and evaluate novel device concepts and material systems to enable future scaling, performance, power, and reliability improvements.
  • Apply deep understanding of semiconductor device physics and first‑principles analysis to guide technology development and design trade‑offs.
  • Serve as an integration owner, aligning device concepts, materials, and process flows into cohesive, actionable technology solutions.
  • Design and run experiments in the R&D fab.
  • Analyze inline, parametric, and probe data to evaluate operating and failure mechanisms, sources of noise and variability.
  • Apply fundamental principles of device physics and materials science to optimize device performance, reliability, and manufacturability.
  • Perform detailed, data‑driven analysis across simulation results, material characterization, and silicon data.
  • Collaborate multi‑functionally with process development, modeling, characterization, reliability, design, and architecture teams.
Required Qualifications
  • PhD or MS in Electrical Engineering, Materials Science, Applied Physics, or a related field.
  • Strong foundation in semiconductor device physics and process integration.
  • Demonstrated record of innovation (patents, publications, product‑relevant solutions).
  • Strong analytical and quantitative problem‑solving skills.
  • Excellent written and verbal communication skills are necessary to communicate technical findings and trade‑offs to diverse technical audiences.
Preferred Qualifications
  • Experience with advanced semiconductor nodes or non‑conventional device architectures.
  • Solid understanding of semiconductor design and architecture.
  • Experience with materials and device characterization.
  • Familiarity with TCAD, physics‑based modeling, and statistical analysis.
  • Background in R&D or technology pathfinding environments.

Job Profile(s):
Semiconductor Process Engineer 2 - Semiconductor Process Engineer 3

Relocation Level: TBD

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

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