RF Power Amplifier Design Engineer; GaAs​/GaN, MMIC & RF Power

Driving advanced radio frequency power amplifier design, MMIC semiconductor development, and high-efficiency wireless transmitter architectures in Chicago, IL, Octagon Group is actively seeking an accomplished RF Power Amplifier Design Engineer for a premier permanent professional engagement. In this vital technical leadership role, you will take full operational, tactical, and technical ownership of high-power RF amplifier design, GaAs and GaN transistor technology integration, linearity optimization, and thermal management.

Bringing extensive professional experience in RF power amplifier and semiconductor circuit design, you will empower an elite technology and semiconductor enterprise to achieve uncompromised output power, superior thermal stability, and state-of-the-art energy efficiency. This prestigious career opportunity offers a lucrative compensation package of up to $200,000, high-visibility enterprise exposure, and professional growth within a leading global technical recruitment and engineering consultancy.

As an RF Power Amplifier Design Engineer supporting Octagon Group on an on-site professional basis in Chicago, IL (US citizens or Green Card holders only), you will take full operational, tactical, and technical ownership of active RF circuit design, simulation, tape-out, and cross-functional engineering collaboration. Your day-to-day responsibilities include designing, simulating, and optimizing high-frequency RF power amplifiers using advanced semiconductor technologies (GaAs, GaN, LDMOS), implementing linearization techniques such as DPD (Digital Predistortion) and envelope tracking, performing rigorous S-parameter, load-pull, and harmonic balance simulations, collaborating proactively with layout engineers, packaging specialists, and test technicians during hardware prototyping, ensuring strict compliance with stringent linearity and efficiency targets, maintaining meticulous design documentation, and interacting directly with talent partners like Bhavesh Patel.

Contract Duration:
Permanent / Full-Time Employment (Chicago, IL)

Work Schedule:

On-Site Professional Operations (Chicago, IL – US Citizens or Green Cards Only)

Notice Period:
Immediate to 30 Days Preferred

Salary/Rate:
Up to $200,000 / Enterprise RF Semiconductor Package

Deadline:
Open until filled (Urgent Chicago RF Power Amplifier Opening)

Company Website: https://(Use the "Apply for this Job" box below)..global

• Architect, design, simulate, and optimize high-efficiency radio frequency (RF) power amplifiers, driver amplifiers, and MMIC circuits.
• Execute advanced transistor-level and board-level simulations utilizing Keysight ADS, Microwave Office, and Ansys HFSS.
• Perform rigorous load-pull measurements, source-pull analysis, and large-signal characterization of GaAs and GaN semiconductor devices.
• Implement advanced linearization architectures including Digital Predistortion (DPD), crest factor reduction (CFR), and envelope tracking.
• Optimize thermal dissipation, matching network topologies, and efficiency metrics across broad operating frequency bands.
• Collaborate proactively with cross-functional semiconductor layout teams, packaging engineers, and test validation squads.
• Ensure strict adherence to military, aerospace, and commercial telecommunications performance specifications.
• Maintain meticulous schematics, layout databases, simulation runbooks, design review packages, and test documentation reports.

• Bachelor’s, Master’s, or Ph.D. degree in Electrical Engineering, RF Engineering, Semiconductor Physics, or related technical discipline.
• Minimum of 5+ years of progressive professional hands-on experience in RF power amplifier design and active…