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Process Development Engineer Intern - MS/PhD
Job in
Dallas, Dallas County, Texas, 75201, USA
Listed on 2026-03-04
Listing for:
Texas Instruments Incorporated
Apprenticeship/Internship
position Listed on 2026-03-04
Job specializations:
-
Engineering
Electrical Engineering, Systems Engineer
Job Description & How to Apply Below
Texas Instruments is looking for motivated interns with a passion for process development, device design and innovation to work with one of several different teams and fabrication sites to enable next generation SiGe technology. This is an exciting opportunity for candidates who enjoy a technical challenge working with equipment, processes, and process integration. This position provides hands on opportunities to work on the development of new high speed SiGe processes and to characterize CMOS, BJT or other silicon devices.
Work with and learn from the leading experts in Texas Instruments and help to deliver the best high speed, analog technologies to the world.
Responsibilities may include, but are not limited to:
* Cadence based layout and Parameterized PCELL coding for silicon devices
* Design of Experiments (DOE) methods to characterize process or design variables
* Wafer level test program development and bench level testing of components
* TCAD simulation of silicon devices to improve performance
* Data analysis and analytical techniques to quantify impact
* Teamwork interacting with a wide variety of teams (Integration, Manufacturing, Reliability, Modelling, etc.)
* Basic programing experience to efficiently collect data and streamline analysis
* Strong communication and presentation skills to present experiment results
Minimum Requirements:
* Currently pursuing Master's of Science in Electrical Engineering, Material Science, Electrical and Computer Engineering, Computer Engineering, Physics or related field
* Minimum Cumulative 3.0/4.0 GPA
Preferred Qualifications:
* Understanding of the fundamental theory of operation of silicon CMOS and BJT devices
* Knowledge of fabrication process steps (e.g. diffusion, implantation, oxidation)
* Demonstrated strong analytical and problem-solving skills
* Strong verbal and written communication skills
* Ability to work in teams and collaborate effectively with people in different functions
* Strong time management skills that enable on-time project delivery
* Demonstrated ability to build strong, influential relationships
* Ability to work effectively in a fast-paced and rapidly changing environment
* Ability to take the initiative and drive for results
Minimum Requirements:
* Currently pursuing Master's of Science in Electrical Engineering, Material Science, Electrical and Computer Engineering, Computer Engineering, Physics or related field
* Minimum Cumulative 3.0/4.0 GPA
Preferred Qualifications:
* Understanding of the fundamental theory of operation of silicon CMOS and BJT devices
* Knowledge of fabrication process steps (e.g. diffusion, implantation, oxidation)
* Demonstrated strong analytical and problem-solving skills
* Strong verbal and written communication skills
* Ability to work in teams and collaborate effectively with people in different functions
* Strong time management skills that enable on-time project delivery
* Demonstrated ability to build strong, influential relationships
* Ability to work effectively in a fast-paced and rapidly changing environment
* Ability to take the initiative and drive for results
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