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SiC Power Device Research Scientist – MVHV Design

Job in Durham, Durham County, North Carolina, 27703, USA
Listing for: US01 Wolfspeed, Inc.
Full Time position
Listed on 2026-05-31
Job specializations:
  • Engineering
    Electrical Engineering, Electronics Engineer
Salary/Wage Range or Industry Benchmark: 100000 - 130000 USD Yearly USD 100000.00 130000.00 YEAR
Job Description & How to Apply Below

Overview

In this position within Wolfspeed’s Power Device Technology Development department, you will be leading device development projects for next-generation silicon carbide (SiC) power devices (MOSFETs, JFETs, JBS diodes and high voltage IGBTs) with an emphasis on High Voltage Bipolar Devices.

You will participate in all aspects of silicon carbide power device development, with a focus on device design efforts. You will interact with key customers as well as colleagues from Process Development, Test and Validation, Reliability, and New Product Introduction to master understanding of the full product life cycle of the new technologies.

Responsibilities
  • Lead device development efforts in high performance SiC power switching devices
  • Participate in device concept development activities in various SiC device structures, including SiC power MOSFETs, JFETs, BJTs, IGBTs, PiN diodes, JBS diodes, and GTO thyristors
  • Explore new device concepts for future High Voltage / Medium Voltage SiC power devices
  • Perform Design of Experiment (DoE) activities for performance optimization of High Voltage SiC power devices
  • Provide optimum device designs with considerations to manufacturability and reliability
  • Hands on characterization of experimental devices
  • Data analysis of experimental data
  • Interact with teams in power electronics applications, fab process development, reliability, and modeling, and deliver device designs with optimal characteristics for target applications
  • Prepare technical presentations and papers for internal meetings, conferences and journals
Requirements
  • Ph.D. in Electrical Engineering, Solid State Physics, or closely related area
  • 5 – 10 years of industrial experience in high voltage silicon bipolar power device development preferred
  • Strong understanding in semiconductor device physics
  • Experience in hands‑on characterization of power semiconductor devices
  • Working knowledge of commercial TCAD tools
  • Working knowledge of CAD layout tools
  • Understanding of semiconductor fabrication processes and process integration
  • Understanding of semiconductor device characterization methods
  • Design of experiments and data interpretation skills
  • Ability to work in a team setting
  • Excellent analytical and problem‑solving skills
  • Excellent communication and presentation skills
  • Must be authorized to work in the USA

This role may require additional duties and/or assignments as designated by management.

Equal Opportunity Employer

Wolfspeed is an equal opportunity employer and all qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, or other characteristics protected by law.

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